Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.

A method for manufacturing a light emitting device includes: providing a light emitting element having a pad on a top surface thereof; forming an initial ball by melting a tip of a wire inserted through a capillary; pressing the initial ball against the pad with the capillary to deform the initial ball to form a ball part, and maintaining the capillary to stay still for a prescribed time; and applying ultrasonic waves to the capillary.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

A process of forming an electronic device includes providing a wire comprising a first ball at an end thereof, operating on the first ball to modify a surface of the first ball to form a modified surface, moving the first ball to a first location on a die, and bonding the first ball along the modified surface to the first location of the die. In an embodiment, the process further includes moving a bonding tool including the wire away from the die while the wire remains bonded to the die.

With this copper wire joining method, a rubbed portion on which a coating remains between an electrode and a core wire is formed on the electrode. Then, after a capillary is moved away from the rubbed portion, and a ball is formed by melting a copper wire at a tip end of the capillary. Next, the ball is joined to the rubbed portion by pressing the ball against the rubbed portion.

A process of forming an electronic device includes providing a wire comprising a first ball at an end thereof, operating on the first ball to modify a surface of the first ball to form a modified surface, moving the first ball to a first location on a die, and bonding the first ball along the modified surface to the first location of the die. In an embodiment, the process further includes moving a bonding tool including the wire away from the die while the wire remains bonded to the die. In another embodiment,

With this copper wire joining method, a rubbed portion on which a coating remains between an electrode and a core wire is formed on the electrode. Then, after a capillary is moved away from the rubbed portion, and a ball is formed by melting a copper wire at a tip end of the capillary. Next, the ball is joined to the rubbed portion by pressing the ball against the rubbed portion.

An integrated circuit package is provided. The integrated circuit package comprises: a die; a lead; and a bond wire comprising a first end coupled to the die and a second end coupled to the lead via bond. The bond wire further comprises: a first portion between a first bend in the bond wire and the bond and forming a first angle with respect to the lead; and a second portion forming a second angle with respect to the lead. The first bend is immediately between the first and second portions and is configured to reduce the angle of the bond wire with respect to the lead from the second angle to the first angle.

A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.

Methods and apparatus for providing an interconnection including a stack of wirebond balls having a selected impedance. The wirebond balls may have a size, which may comprise a radius, configured for the selected impedance. The stack may comprise a number of wirebond balls configured for the selected impedance and/or may comprise a material selected for the selected impedance. In embodiments, the selected impedance is primarily resistive (e.g., 50 Ohms), such that the overall reactance is minimized.