A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175 C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175 C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

Reliability of a semiconductor device is improved. A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)