A semiconductor package and a method for forming a semiconductor package are disclosed. The semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, a shock-absorbing material over a profile of the sacrificial fuse element, and mold compound covering the semiconductor die, the conductor, and the shock-absorbing material, and partially covering the metallic pad and leads, with the metallic pad and the leads exposed on an outer surface of the semiconductor package. Either a glass transition temperature of the shock-absorbing material or a melting point of the shock-absorbing material is lower than a melting point of the conductor.

A flexible multilayer construction (100) for mounting a light emitting semiconductor device (200) (LESD), includes a flexible dielectric substrate (110) having an LESD mounting region (120), first and second electrically conductive pads (130, 140) disposed in the LESD mounting region for electrically connecting to corresponding first and second electrically conductive terminals of an LESD (200) received in the LESD mounting region, and a first fiducial alignment mark (150) for an accurate placement of an LESD in the LESD mounting region. The first fiducial alignment mark is disposed within the LESD mounting region.

A semiconductor package may include a first die disposed on a package substrate, a second die stacked on the first die, and a first position checker disposed on the package substrate. The first position checker may indicate a first position allowable range in which a first side of the first die can be located.

A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first pad, and a second pad. A first opening and a second opening are formed in a first main surface of the first semiconductor layer. The second semiconductor layer is stacked on the first semiconductor layer. The first pad for wire bonding is disposed in the first opening. The second pad on which an alignment mark is formed is disposed in the second opening. A third opening and a fourth opening penetrate the second semiconductor layer. The first opening overlaps the third opening. The second opening overlaps the fourth opening.

A semiconductor package includes a semiconductor die including a semiconductor substrate, a strain-sensitive component located within or over a metallization layer of the semiconductor die, wherein a parameter of the strain-sensitive component exhibits a longitudinal shift due to a longitudinal strain and a transverse shift due to a transverse strain, and a mold compound covering the semiconductor die and the strain-sensitive component. The semiconductor package, including the semiconductor die and the mold compound, defines an orthogonal package-induced strain ratio on the strain-sensitive component on the semiconductor die surface. The strain-sensitive component is located such that the longitudinal shift due to package-induced strains offsets the transverse shift due to the package-induced strains.

A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, a shock-absorbing material over a profile of the sacrificial fuse element, and mold compound covering the semiconductor die, the conductor, and the shock-absorbing material, and partially covering the metallic pad and leads, with the metallic pad and the leads exposed on an outer surface of the semiconductor package. Either a glass transition temperature of the shock-absorbing material or a melting point of the shock-absorbing material is lower than a melting point of the conductor.

A flexible multilayer construction (100) for mounting a light emitting semiconductor device (200) (LESD), includes a flexible dielectric substrate (110) having an LESD mounting region (120), first and second electrically conductive pads (130, 140) disposed in the LESD mounting region for electrically connecting to corresponding first and second electrically conductive terminals of an LESD (200) received in the LESD mounting region, and a first fiducial alignment mark (150) for an accurate placement of an LESD in the LESD mounting region. The first fiducial alignment mark is disposed within the LESD mounting region.

A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

Provided is a semiconductor device capable of maintaining the flatness of a glass substrate and sufficiently protecting an end portion of the glass substrate. The semiconductor device includes a glass substrate including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface. The semiconductor device further includes wirings provided provided on the first and second surfaces, a first insulating film that covers the first surface, a second insulating film that covers the second surface, and a third insulating film that covers the first side surface, the third insulating film being continuous with at least one of the first or second insulating films.