A method of fabricating a package structure including at least the following steps is provided. A carrier is provided. A first package is formed on the carrier. The first package is formed by at least the following steps. A first redistribution layer is formed on the carrier, wherein the first redistribution layer has a first surface and a second surface opposite to the first surface. A semiconductor die is bonded on the first surface of the first redistribution layer. The semiconductor die is electrically connected to the first redistribution layer through a plurality of conductive wires. An insulating material is formed to encapsulate the semiconductor die and the plurality of conductive wires. A thinning process is performed to obtain an insulating encapsulant by reducing a thickness of the insulating material until a portion of each of the conductive wires is removed to form a plurality of conductive wire segments, wherein the semiconductor die is electrically insulated from the first redistribution layer after the thinning process. A second redistribution layer is formed on a top surface of the insulating encapsulant, and over the semiconductor die. The second redistribution layer is electrically connected to the first redistribution layer and to the semiconductor die by the plurality of conductive wire segments.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5 C./sec from 80 C. to 300 C. under pressure of 10 MPa, and then held at 300 C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.

A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, a heat emission member on the lower semiconductor chip, the heat emission member having a horizontal unit and a vertical unit connected to the horizontal unit, a first semiconductor chip stack and a second semiconductor chip stack on the horizontal unit, and a molding member that surrounds the lower semiconductor chip, the first and second semiconductor chip stacks, and the heat emission member. The vertical unit may be arranged between the first semiconductor chip stack and the second semiconductor chip stack, and an upper surface of the vertical unit may be exposed in the molding member.

A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, a heat emission member on the lower semiconductor chip, the heat emission member having a horizontal unit and a vertical unit connected to the horizontal unit, a first semiconductor chip stack and a second semiconductor chip stack on the horizontal unit, and a molding member that surrounds the lower semiconductor chip, the first and second semiconductor chip stacks, and the heat emission member. The vertical unit may be arranged between the first semiconductor chip stack and the second semiconductor chip stack, and an upper surface of the vertical unit may be exposed in the molding member.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

Systems and methods for creating interlayer mechanical or electrical attachments or connections using filaments within a three-dimensional structure, structural component, or structural electronic, electromagnetic, or electromechanical component/device.

A bonding wire includes a wire core including a silver-palladium alloy. A coating layer is disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

A method of fabricating a package structure including at least the following steps is provided. A carrier is provided. A first package is formed on the carrier. The first package is formed by at least the following steps. A first redistribution layer is formed on the carrier, wherein the first redistribution layer has a first surface and a second surface opposite to the first surface. A semiconductor die is bonded on the first surface of the first redistribution layer. The semiconductor die is electrically connected to the first redistribution layer through a plurality of conductive wires. An insulating material is formed to encapsulate the semiconductor die and the plurality of conductive wires. A thinning process is performed to obtain an insulating encapsulant by reducing a thickness of the insulating material until a portion of each of the conductive wires is removed to form a plurality of conductive wire segments, wherein the semiconductor die is electrically insulated from the first redistribution layer after the thinning process. A second redistribution layer is formed on a top surface of the insulating encapsulant, and over the semiconductor die. The second redistribution layer is electrically connected to the first redistribution layer and to the semiconductor die by the plurality of conductive wire segments.