A semiconductor device includes an insulating member, a light-receiving element, a light-emitting element, a switching element, a metal reflection plate, a first resin member and a second resin member. The light-receiving element, the switching element and the metal reflection plate are provided on and arranged along a front surface of the insulating member. The switching element is electrically connected to the light-receiving element. The light-emitting element provided on the light-receiving element and optically coupled to the light-receiving element. The metal reflection plate is proximate to the light-receiving element. The first resin member covering the light-emitting element on the light-receiving element. The second resin member covering the light-receiving element, the light-emitting element, the first resin member, the switching element, and the metal reflection plate on the front surface of the insulating member.

A semiconductor device includes an insulating member, a light-receiving element, a light-emitting element, a switching element, a metal reflection plate, a first resin member and a second resin member. The light-receiving element, the switching element and the metal reflection plate are provided on and arranged along a front surface of the insulating member. The switching element is electrically connected to the light-receiving element. The light-emitting element provided on the light-receiving element and optically coupled to the light-receiving element. The metal reflection plate is proximate to the light-receiving element. The first resin member covering the light-emitting element on the light-receiving element. The second resin member covering the light-receiving element, the light-emitting element, the first resin member, the switching element, and the metal reflection plate on the front surface of the insulating member.

An ultrasonic bonding apparatus includes an ultrasonic bonding machine having an ultrasonic tool for applying an ultrasonic wave to a bonding target member mounted on a fixed object fixed to a jig, while pressing a bonding member against the bonding target member; and a bonding inspection apparatus for inspecting a bonding quality of the bonding target member and the bonding member. The bonding inspection apparatus includes: a bonded-state measuring device for detecting a vibration in the jig or a housing of the ultrasonic bonding machine equipped with the jig, to thereby output a detection signal; and a bonded-state determination device for determining, in a bonding process for the bonding target member and the bonding member, a bonded state between the bonding target member and the bonding member on the basis of the detection signal outputted by the bonded-state measuring device.

A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

A wire bonding device for performing a wire bonding process includes: a bonding tool for inserting a wire; an ultrasonic vibrator; a drive mechanism for moving the bonding tool; and a control part. The control part performs: a bonding step of bonding the wire to a bonding point; a tail feeding out step of feeding out a wire tail from the wire bonded to the bonding point; a tension applying step of raising the bonding tool to apply tension to the wire while the wire is clamped; a tension release step of lowering the bonding tool to release the tension applied to the wire; and after performing a series of steps including the tension applying step and the tension release step at least once, a tail cutting step of raising the bonding tool to cut the wire tail from the wire.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of -30° to 30° with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is -30° to 30°.

In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.