A package structure and a manufacturing method thereof are provided. The package structure includes a substrate, a semiconductor package, a thermal conductive gel, a thermal conductive film, and a heat spreader. The semiconductor package has an uneven top surface. The thermal conductive gel covers the uneven top surface of the semiconductor package. The thermal conductive film is over the uneven top surface of the semiconductor package. A thermal conductivity of the thermal conductive film is higher than a thermal conductivity of the thermal conductive gel. The heat spreader is disposed over the thermal conductive film.

A package structure and a manufacturing method thereof are provided. The package structure includes a substrate, a semiconductor package, a thermal conductive gel, a thermal conductive film, and a heat spreader. The semiconductor package has an uneven top surface. The thermal conductive gel covers the uneven top surface of the semiconductor package. The thermal conductive film is over the uneven top surface of the semiconductor package. A thermal conductivity of the thermal conductive film is higher than a thermal conductivity of the thermal conductive gel. The heat spreader is disposed over the thermal conductive film.

A semiconductor package includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes a substrate having a first via hole, an insulation interlayer formed on the substrate and having a first bonding pad in an outer surface thereof and a second via hole connected to the first via hole and exposing the first bonding pad, and a plug structure formed within the first and second via holes to be connected to the first bonding pad. The second semiconductor chip includes a second bonding pad bonded to the plug structure which is exposed from a surface of the substrate of the first semiconductor chip.

A semiconductor package includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes a substrate having a first via hole, an insulation interlayer formed on the substrate and having a first bonding pad in an outer surface thereof and a second via hole connected to the first via hole and exposing the first bonding pad, and a plug structure formed within the first and second via holes to be connected to the first bonding pad. The second semiconductor chip includes a second bonding pad bonded to the plug structure which is exposed from a surface of the substrate of the first semiconductor chip.

Semiconductor assemblies including thermal management configurations for reducing heat transfer between overlapping devices and associated systems and methods are disclosed herein. A semiconductor assembly may comprise a first device and a second device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the first and second devices. The thermally conductive layer and/or the thermal-insulator interposer may be configured to reduce heat transfer between the first and second devices.

Semiconductor assemblies including thermal management configurations for reducing heat transfer between overlapping devices and associated systems and methods are disclosed herein. A semiconductor assembly may comprise a first device and a second device with a thermally conductive layer, a thermal-insulator interposer, or a combination thereof disposed between the first and second devices. The thermally conductive layer and/or the thermal-insulator interposer may be configured to reduce heat transfer between the first and second devices.

An integrated circuit component includes a semiconductor substrate, conductive pads, a passivation layer and conductive vias. The semiconductor substrate has an active surface. The conductive pads are located on the active surface of the semiconductor substrate and electrically connected to the semiconductor substrate, and the conductive pads each have a contact region and a testing region, where in each of the conductive pads, an edge of the contact region is in contact with an edge of the testing region. The passivation layer is located on the semiconductor substrate, where the conductive pads are located between the semiconductor substrate and the passivation layer, and the testing regions and the contact regions of the conductive pads are exposed by the passivation layer. The conductive vias are respectively located on the contact regions of the conductive pads.

An integrated circuit component includes a semiconductor substrate, conductive pads, a passivation layer and conductive vias. The semiconductor substrate has an active surface. The conductive pads are located on the active surface of the semiconductor substrate and electrically connected to the semiconductor substrate, and the conductive pads each have a contact region and a testing region, where in each of the conductive pads, an edge of the contact region is in contact with an edge of the testing region. The passivation layer is located on the semiconductor substrate, where the conductive pads are located between the semiconductor substrate and the passivation layer, and the testing regions and the contact regions of the conductive pads are exposed by the passivation layer. The conductive vias are respectively located on the contact regions of the conductive pads.

An optoelectronic device includes an optical integrated circuit having a first surface and a second surface opposite the first surface. The optical integrated circuit has an optical zone of the first surface of the optical integrated circuit. The device includes an electrically insulating material disposed over the optical integrated circuit, where he electrically insulating material partially covers the first surface so as to expose the optical zone.

An optoelectronic device includes an optical integrated circuit having a first surface and a second surface opposite the first surface. The optical integrated circuit has an optical zone of the first surface of the optical integrated circuit. The device includes an electrically insulating material disposed over the optical integrated circuit, where he electrically insulating material partially covers the first surface so as to expose the optical zone.