A semiconductor device includes: an insulated circuit substrate including first and second conductive layers on a top surface side; a first semiconductor chip mounted on the first conductive layer; a second semiconductor chip mounted on the second conductive layer; a printed circuit board including a first lower-side wiring layer arranged to be opposed to the first semiconductor chip, and a second lower-side wiring layer arranged to be opposed to the second semiconductor chip, the printed circuit board being provided with a curved part curved toward the insulated circuit substrate; a first connection member arranged to connect the first semiconductor chip with the first lower-side wiring layer; a second connection member arranged to connect the second semiconductor chip with the second lower-side wiring layer; and a third connection member arranged to connect the first conductive layer with the second lower-side wiring layer at the curved part.

A semiconductor device includes: an insulated circuit substrate including first and second conductive layers on a top surface side; a first semiconductor chip mounted on the first conductive layer; a second semiconductor chip mounted on the second conductive layer; a printed circuit board including a first lower-side wiring layer arranged to be opposed to the first semiconductor chip, and a second lower-side wiring layer arranged to be opposed to the second semiconductor chip, the printed circuit board being provided with a curved part curved toward the insulated circuit substrate; a first connection member arranged to connect the first semiconductor chip with the first lower-side wiring layer; a second connection member arranged to connect the second semiconductor chip with the second lower-side wiring layer; and a third connection member arranged to connect the first conductive layer with the second lower-side wiring layer at the curved part.

An electronic substrate may be fabricated having a core comprising a laminate including a metal layer between a first insulator layer and a second insulator layer, a metal via through the core, and metallization features on a first side and a second side of the core, wherein first ones of the metallization features are embedded within dielectric material on the first side of the core, and wherein a sidewall of the dielectric material and of the first insulator layer defines a recess over an area of the metal layer. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board. Other embodiments are disclosed and claimed.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

A PTFE sheet in which PTFE fibers having a diameter of 1 μm or less are spun, the PTFE sheet having a Gurley value in the range of 1 s/100 cc/in.sup.2 to 3 s/100 cc/in.sup.2 and a shrinkage factor in a direction orthogonal to a sheet winding direction of no more than 10% when heated to 300° C. The PTFE sheet makes a die adsorbable via a tool, which is for heating the die when the die is mounted on a mounting body, by being sandwiched between the die and the tool, and suppresses the adhesion, to an adsorption surface of the tool or to the die, of an adhesion member for fixing the die to the mounted body. Through this configuration, a PTFE sheet capable of stabilizing vacuum adsorption and improving maintainability and a method for mounting a die are provided.

A semiconductor device is vertically mounted on a medium such as a printed circuit board (PCB). The semiconductor device comprises a block of semiconductor dies, mounted in a vertical stack without offset. Once formed and encapsulated, side grooves may be formed in the device exposing electrical conductors of each die within the device. The electrical conductors exposed in the grooves mount to electrical contacts on the medium to electrically couple the semiconductor device to the medium.

A semiconductor device is vertically mounted on a medium such as a printed circuit board (PCB). The semiconductor device comprises a block of semiconductor dies, mounted in a vertical stack without offset. Once formed and encapsulated, side grooves may be formed in the device exposing electrical conductors of each die within the device. The electrical conductors exposed in the grooves mount to electrical contacts on the medium to electrically couple the semiconductor device to the medium.

The present invention includes a method for creating a system in a package with integrated lumped element devices and active devices on a single chip/substrate for heterogeneous integration system-on-chip (HiSoC) in photo-definable glass, comprising: masking a design layout comprising one or more electrical passive and active components on or in a photosensitive glass substrate; activating the photosensitive glass substrate, heating and cooling to make the crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate; and depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate on the surface of the photodefinable glass.

The present disclosure relates to an electronic device comprising a wafer comprising a first upper surface having at least one first contact arranged thereon; and at least one die comprising a second upper surface having at least one second contact arranged thereon, and at least one first lateral surface orthogonal to the second upper surface, said first contact being coupled to said second contact by a connector comprising one first conductive pillar formed on said first contact of said wafer; one second conductive pillar formed on said second contact of said die; and at least one conductive ball positioned in contact with at least a first upper portion of said first pillar(s) and in contact with at least one second upper portion of said second pillar(s).

The present disclosure relates to an electronic device comprising a wafer comprising a first upper surface having at least one first contact arranged thereon; and at least one die comprising a second upper surface having at least one second contact arranged thereon, and at least one first lateral surface orthogonal to the second upper surface, said first contact being coupled to said second contact by a connector comprising one first conductive pillar formed on said first contact of said wafer; one second conductive pillar formed on said second contact of said die; and at least one conductive ball positioned in contact with at least a first upper portion of said first pillar(s) and in contact with at least one second upper portion of said second pillar(s).