Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause phototransistors or electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. A set of micro-object may be analyzed. Geometric properties of the set of micro-objects may be identified. The set of micro-objects may be divided into multiple sub-sets of micro-objects based on the one or more geometric properties and one or more control patterns.

A light emitting device includes: a substrate; a first electrode and a second electrode on the substrate and spaced apart from each other; a light emitting diode between the first electrode and the second electrode and connected to the first and second electrodes; a first contact on the first electrode; and a second contact on the second electrode. The first contact contacts the first electrode and a first portion of the light emitting diode, and the second contact contacts the second electrode and a second portion of the light emitting diode.

A display device can include a plurality of semiconductor light emitting diodes; first and second wiring electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes; a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode that generate an electric field when a current is supplied thereto; a dielectric layer disposed to cover the plurality of pair electrodes; and a covalent bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes, and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes, wherein the first wiring electrode and the second wiring electrode are located at opposite sides of the plurality of pair electrodes based on the plurality of semiconductor light emitting diodes.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. The control patterns may be part of a library of control patterns.

A display device includes a first electrode and a second electrode disposed on a substrate, the first and second electrodes being spaced apart from each other with a spaced area disposed between the first and second electrodes, an insulating layer disposed on the first electrode and the second electrode, the insulating layer filling the spaced area, and a light emitting element disposed on the insulating layer and having a first end disposed on the first electrode and a second end opposite to the first end. The insulating layer includes a first opening adjacent to the first end and exposing the insulating layer, and the spaced area is adjacent to the second end of the light emitting element.

A display device can include a base part; first electrodes which extend in one direction and which are formed on the base part at certain intervals; an insulating layer formed on the base part to cover the first electrodes; second electrodes which extend in the same direction as the first electrodes and which are formed on the insulating layer so as to be arranged between the first electrodes; a partition part stacked on the insulating layer and the second electrodes while forming assembly holes so as to be overlapped on the first electrodes and the second electrodes; semiconductor light-emitting elements placed in the assembly holes; and third electrodes arranged on the partition part. The semiconductor light-emitting elements are not electrically connected to the first electrodes and are electrically connected to the second electrodes and the third electrodes.

A semiconductor light emitting element according to an embodiment of the present disclosure includes: a n-type semiconductor layer; a p-type semiconductor layer formed in a first region on the n-type semiconductor layer; a p-type electrode formed on the p-type semiconductor layer; a n-type electrode formed in a second region different from the first region on the n-type semiconductor layer; and a magnetic layer formed under the n-type semiconductor layer.

A mass transfer device and a transfer method therefor are provided. The mass transfer device includes a transfer container. The transfer container is filled with insulating liquid and provided with two electrode plates. The two electrode plates are arranged opposite to each other and have opposite electrical polarities. One of the two electrode plates is provided with a second substrate on a surface of the electrode plate opposite to the other one of the two electrode plates. The second substrate is configured to hold transferred light-emitting diode (LED) chips. The transfer container is externally provided with a laser emitter. The laser emitter is aligned with LED chips on a first substrate. The first substrate is arranged between the two electrode plates and mounted on a first displacement device. The first displacement device is configured to control the first substrate to move vertically downward.

A mass transfer device and a transfer method therefor are provided. The mass transfer device includes a transfer container. The transfer container is filled with insulating liquid and provided with two electrode plates. The two electrode plates are arranged opposite to each other and have opposite electrical polarities. One of the two electrode plates is provided with a second substrate on a surface of the electrode plate opposite to the other one of the two electrode plates. The second substrate is configured to hold transferred light-emitting diode (LED) chips. The transfer container is externally provided with a laser emitter. The laser emitter is aligned with LED chips on a first substrate. The first substrate is arranged between the two electrode plates and mounted on a first displacement device. The first displacement device is configured to control the first substrate to move vertically downward.

A pick-up device has a caves. A first magnetic force is capable of attracting micro-devices to move toward the caves of the pick-up device. The pick-up device is disposed on a pick-up roller, and the pick-up roller drives the caves of the pick-up device to move relative to the micro-devices. Given that the first magnetic force is provided, the pick-up device compresses the micro-devices, so that the micro-devices are fitted in place the micro-devices into the caves of the pick-up device, wherein a shape of the caves is the same as a shape of the micro-devices. The micro-devices are transferred from the caves of the pick-up device to a receiving device.