Discussed is a display device, including a substrate having an assembly region and a non-assembly region, semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from each of the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes disposed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, a dielectric layer disposed on the pair electrodes, and bus electrodes electrically connected to the pair electrodes, wherein the pair electrodes are arranged in parallel to each other along a direction in the assembly region, and wherein the bus electrodes are disposed in the non-assembly region.

Light emitting devices and methods for their manufacture are provided. According to one aspect, a light emitting device is provided that comprises a substrate having a recess, and an interlayer dielectric layer located on the substrate. The interlayer dielectric layer may have a first hole and a second hole, the first hole opening over the recess of the substrate. The light emitting device may further include first and second micro LEDs, the first micro LED having a thickness greater than the second micro LED. The first micro LED and the second micro LED may be placed in the first hole and the second hole, respectively.

A wafer-level semiconductor die attachment method includes placing a semiconductor die of a plurality of semiconductor dies at an initial placement position to overlap a sub-mount pad on a sub-mount of a pre-singulated wafer. A die pad of the semiconductor die comes in contact with a solder layer deposited over the sub-mount pad. The semiconductor die and the sub-mount include a plurality of die and sub-mount mating features, respectively. The solder layer is heated locally to temporarily hold the semiconductor die at the initial placement position. The pre-singulated wafer is reflowed, when each semiconductor die is temporarily held at the corresponding initial placement position. During reflow, each semiconductor die slides from the initial placement position and a contact is established between the corresponding plurality of die and sub-mount mating features. Thereby, each semiconductor die is permanently attached to the corresponding sub-mount.

The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LEDs comprises: forming a mask layer on the backside of a laser-transparent original substrate, wherein micro-LEDs are formed on the front-side of the original substrate; bringing the micro-LEDs on the original substrate in contact with preset pads on a receiving substrate; and irradiating the original substrate from the original substrate side with laser through the mask layer, to lift-off micro-LEDs from the original substrate.

A method for producing a semiconductor chip is a method for producing a semiconductor chip that includes a substrate, a conductive portion formed on the substrate, and a microbump formed on the conductive portion, which includes a smooth surface formation process of forming a smooth surface on the microbump, and the smooth surface formation process includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump and among principal surfaces of the pressure application member, a principal surface that contacts the microbump is a flat surface.

A method for producing a semiconductor package is a method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump.

A method of manufacturing an emissive LED display device, including the steps of forming a plurality of chips, each including at least one LED and, on a connection surface, a plurality of hydrophilic electric connection areas and a hydrophobic area; forming a transfer substrate including, for each chip, a plurality of hydrophilic electric connection areas and a hydrophobic area; arranging a drop of a liquid on each electric connection area of the transfer substrate and/or of each chip; and affixing the chips to the transfer substrate by direct bonding, using the capillary restoring force of the drops to align the electric connection areas of the chips with the electric connection areas of the transfer substrate.

A method for producing a semiconductor package is a method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump.

A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

A dual solder layer for fluidic self assembly, an electrical component substrate, and method employing same is described. The dual solder layer comprises a layer of a self-assembly solder disposed on a layer of a base solder which is disposed on the solder pad of an electrical component substrate. The self-assembly solder has a liquidus temperature less than a first temperature and the base solder has a solidus temperature greater than the first temperature. The self-assembly solder liquefies at the first temperature during a fluidic self assembly method to cause electrical components to adhere to the substrate. After attachment, the substrate is removed from the bath and heated so that the base solder and self-assembly solder combine to form a composite alloy which forms the final electrical solder connection between the component and the solder pad on the substrate.