An interposer comprises a semiconductor material and includes cache memory under a location on the interposer for a host device. Memory interface circuitry may also be located under one or more locations on the interposer for memory devices. Microelectronic device assemblies incorporating such an interposer and comprising a host device and multiple memory devices are also disclosed, as are methods of fabricating such microelectronic device assemblies.

An IC package includes a substrate, a first monolithic die, a second monolithic die and a third monolithic die. A processing unit circuit is formed in the first monolithic die. A plurality of SRAM arrays are formed in the second monolithic die, wherein the plurality of SRAM arrays include at least 5-20 G Bytes. A plurality of DRAM arrays are formed in the third monolithic die, wherein the plurality of DRAM arrays include at least 64-512 G Bytes. The first monolithic die, the second monolithic die and the third monolithic die are vertically stacked above the substrate. The third monolithic die is electrically connected to the first monolithic die through the second monolithic die.

According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

A device includes: a first chip including a qubit; and a second chip bonded to the first chip, the second chip including a substrate including first and second opposing surfaces, the first surface facing the first chip, wherein the second chip includes a single layer of superconductor material on the first surface of the substrate, the single layer of superconductor material including a first circuit element. The second chip further includes a second layer on the second surface of the substrate, the second layer including a second circuit element. The second chip further includes a through connector that extends from the first surface of the substrate to the second surface of the substrate and electrically connects a portion of the single layer of superconducting material to the second circuit element.

Stacked semiconductor die architectures having one or more base dies and techniques of forming such architectures are described. The stacked semiconductor die architectures may be included in or used to form semiconductor packages. A stacked semiconductor die architecture can include: (i) one or more base dies (e.g., at least one disaggregated base die, at least one monolithic base die, etc.); and (ii) a carrier wafer having multiple stacked semiconductor dies embedded in the carrier wafer, where the carrier wafer is on the one or more base dies and where one or more interconnect structures (e.g., wires, bumps, microbumps, pillars, etc.) couple the one or more base dies to the carrier wafer and/or the stacked semiconductor dies.

Systems and methods for multi-height interconnect structures for a semiconductor device are provided herein. The multi-height interconnect structure generally includes a primary level semiconductor die having a primary conductive pillar and a secondary conductive pillar, where the primary conductive pillar has a greater height than the secondary conductive pillar. The semiconductor device may further include a substrate electrically coupled to the primary level semiconductor die through the primary conductive pillar and a secondary level semiconductor die electrically coupled to the primary level semiconductor die through the secondary conductive pillar. The multi-height pillars may be formed using a single photoresist mask or multiple photoresist masks. In some configurations, the primary and secondary conductive pillars may be arranged on only the front-side of the dies and/or substrate.

A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.

A semiconductor package includes a first die comprising an upper surface and a lower surface opposite to the upper surface. The first die includes a plurality of through-silicon vias (TSVs) penetrating through the first die. A second die is stacked on the upper surface of the first die. An interposer layer is disposed on the lower surface of the first die. An inductor is disposed in the interposer layer. The inductor comprises terminals directly coupled to the TSVs.

A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

A semiconductor package includes a first semiconductor chip mounted on the package substrate, a second semiconductor mounted on the package substrate and set apart from the first semiconductor chip in a horizontal direction thereby forming a gap between the first semiconductor chip and the second semiconductor chip. The semiconductor package further includes a first thermal interface material layer formed in the gap and having a first modulus of elasticity and a second thermal interface material layer formed on each of the first semiconductor chip and the second semiconductor chip and having a second modulus of elasticity, wherein the first modulus of elasticity is less than the second modulus of elasticity.