A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first module, a second module, a first intermediate circuit layer, a first conductive transmission path and a second conductive transmission path. The second module is stacked on the first module. The first intermediate circuit layer is arranged between the first module and the second module. The first conductive transmission is configured to electrically connect the first semiconductor module with the first intermediate circuit layer. The second conductive transmission path is configured to electrically connect the first intermediate circuit layer with the second semiconductor module.

A chip bonding method includes the following operations. A first chip is provided, which includes a first contact pad including a first portion lower than a first surface of a first substrate and a second portion higher than the first surface of the first substrate to form the stepped first contact pad. A second chip is provided, which includes a second contact pad including a third portion lower than a third surface of a second substrate and a fourth portion higher than the third surface of the second substrate to form the stepped second contact pad. The first chip and the second chip are bonded. The first portion of the first chip contacts with the fourth portion of the second chip, and the second portion of the first chip contacts with the third portion of the second chip.

Forming a 3DIC includes providing a lower device structure comprising a first substrate with a circuit layer, providing an interconnect network layer having an interconnect structure with a first coupled to a second plurality of electrodes by connection structures on a semiconductor substrate, the first plurality of electrodes being exposed on a first surface of the interconnect layer, implanting ions through the interconnect structure to form a cleave plane in the semiconductor substrate, bonding the interconnect structure to the lower device structure so that electrodes of the first plurality of electrodes are coupled to corresponding electrodes on the lower device structure, cleaving the substrate of the bonded interconnect layer at the cleave plane, removing material from the semiconductor substrate until the second plurality of electrodes is exposed, and bonding an upper device layer to the interconnect structure.

A method for fabricating semiconductor device includes the steps of first providing a first substrate having a high-voltage (HV) region and a medium voltage (MV) region and a second substrate having a low-voltage (LV) region and a static random access memory (SRAM) region, in which the HV region includes a HV device, the MV region includes a MV device, the LV region includes a fin field-effect transistor (FinFET), and the SRAM region includes a SRAM device. Next, a bonding process is conducted by using hybrid bonding, through-silicon interposer (TSI) or redistribution layer (RDL) for bonding the first substrate and the second substrate.

In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first and second semiconductor structures. The first semiconductor structure includes an array of NAND memory strings, a first peripheral circuit of the array of NAND memory strings including a first transistor, a polysilicon layer between the array of NAND memory strings and the first peripheral circuit, and a first semiconductor layer in contact with the first transistor. The polysilicon layer is in contact with sources of the array of NAND memory strings. The second semiconductor structure includes a second peripheral circuit of the array of NAND memory strings including a second transistor, and a second semiconductor layer in contact with the second transistor. The second semiconductor layer is between the bonding interface and the second peripheral circuit. The polysilicon layer is between the first semiconductor layer and the second semiconductor layer.

A semiconductor package may include a redistribution substrate including first and second surfaces opposite each other, a first semiconductor chip on the first surface, a first molding portion on a side surface of the first semiconductor chip, a second semiconductor chip between the first semiconductor chip and the redistribution substrate, a second molding portion between the redistribution substrate and the first molding portion and on a side surface of the second semiconductor chip, bump patterns between the second semiconductor chip and the redistribution substrate, and a mold via penetrating the second molding portion and electrically connecting the first semiconductor chip to the redistribution substrate. The redistribution substrate may include first and second redistribution patterns sequentially in an insulating layer. The mold via may contact the second redistribution pattern, and the bump patterns may contact the first redistribution pattern.

An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

A method for forming a hybrid-bonding structure is provided. The method includes forming a first dielectric layer over a first semiconductor substrate. The first semiconductor substrate includes a conductive structure. The method also includes partially removing the first dielectric layer to form a first dielectric dummy pattern, a second dielectric dummy pattern and a third dielectric dummy pattern and an opening through the first dielectric layer. The first dielectric dummy pattern, the second dielectric dummy pattern and the third dielectric dummy pattern are surrounded by the opening. In addition, the method includes forming a first conductive line in the opening. The first conductive line is in contact with the conductive structure.

Apparatus and methods are disclosed. In one example, a semiconductor package includes a first die that has a first surface and a first electrical lead at or near the first surface. The semiconductor package also includes a substrate that has a second surface and is coupled to the first die at a first interface. The substrate also includes a first electrode at or near the second surface and at least a first portion of an integrated passive device that is coupled to the first electrode. The first electrode is aligned with and coupled to the first electrical lead across the first interface.

Described herein are three-dimensional memory arrays that include multiple layers of memory cells. The layers are stacked and bonded to each other at bonding interfaces. The layers are formed on a support structure, such as a semiconductor wafer, that is grinded down before the layers are bonded. Vias extend through multiple layers of memory cells, including through the support structures and bonding interfaces. Thinning the support structure enables a tighter via pitch, which reduces the portion of the footprint used for vias. The memory cells may include three-dimensional transistors with a recessed gate and extended channel length.