A method for forming a package structure is provided, which includes recessing a substrate to form a trench, disposing a first stacked die package structure over the substrate, forming an underfill layer over the first stacked die package structure and in the trench, and forming a package layer over the underfill layer and in the trench.

A semiconductor package includes a redistribution layer and a semiconductor chip provided on the redistribution layer having a first surface and a second surface opposite to the first surface. The semiconductor chip includes a first chip pad and a second chip pad which are exposed at the first surface. The semiconductor package further includes a capacitor chip disposed between the first surface and the redistribution layer and including a capacitor chip pad connected to the first chip pad, an insulating layer covering the first surface and the capacitor chip, and a conductive post being in contact with the second chip pad and penetrating the insulating layer so as to be connected to the redistribution layer. The conductive post may be spaced apart from the capacitor chip.

Methods, systems, and devices for enabling the use of SIP subsystems to make a configurable system with desired characteristics and features are provided. A configurable system's unique interconnecting scheme creates appropriate connections between the SIP components and/or subsystems.

[Object] To reduce the size of a semiconductor device having a semiconductor chip mounted thereon while reducing the influence of thermal conduction to the semiconductor chip in the semiconductor device. [Solution] In the semiconductor device, a first package is provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged. A second package is provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner. A connection portion electrically connects the first wiring and the second wiring.

Provided is a semiconductor package having high electric reliability. The semiconductor package includes a lower sub-semiconductor package including a lower semiconductor chip and a lower mold layer on the lower semiconductor chip and having a mold via hole, an upper sub-semiconductor package including an upper semiconductor chip, a filling layer that is between the lower sub-semiconductor package and the upper sub-semiconductor package, a connection via in the mold via hole that penetrates the lower mold layer and the filling layer and electrically connects the lower sub-semiconductor package to the upper sub-semiconductor package. The filling layer includes an extending part of the filling layer that extends into the mold via hole of the filling layer from a portion having a higher level than a top surface of the lower mold layer.

A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.

Embodiments of inventive concepts disclosed provide a method of manufacturing a semiconductor package. The method includes mounting a plurality of semiconductor chips on a substrate having a connecting member protruding from a top surface of the substrate, applying a non-conductive paste on the substrate and the semiconductor chips, forming a supporting layer coupling each of the semiconductor chips to the substrate, aligning an interposer on the non-conductive paste, forming a non-conductive layer by applying heat while pressing the interposer and the substrate against each other, and cutting the substrate, the non-conductive layer, and the interposer into separate unit packages, each of which include a semiconductor chip.

A semiconductor device includes a first passivation layer over a circuit and. conductive pad over the first passivation layer, wherein the conductive pad is electrically connected to the circuit. A second passivation layer is disposed over the conductive pad and the first passivation layer, and has a first opening and a second opening. The first opening exposes an upper surface of a layer that extends underneath the conductive pad, and the second opening exposes the conductive pad. A first insulating layer is disposed over the second passivation layer and filling the first and second openings. A through substrate via extends through the insulating layer, second passivation layer, passivation layer, and substrate. A side of the through substrate via and the second passivation layer have a gap that is filled with the first insulating layer. A conductive via extends through the first insulating layer and connecting to the conductive pad.

A semiconductor module comprises a semiconductor device; a substrate, on which the semiconductor device is attached; a molded encasing, into which the semiconductor device and the substrate are molded; at least one power terminal partially molded into the encasing and protruding from the encasing, which power terminal is electrically connected with the semiconductor device; and an encased circuit board at least partially molded into the encasing and protruding over the substrate in an extension direction of the substrate, wherein the encased circuit board comprises at least one receptacle for a pin, the receptacle being electrically connected via the encased circuit board with a control input of the semiconductor device.

A semiconductor package includes a first package and a second package stacked on the first package. The first package includes a redistribution substrate, a first semiconductor chip on the redistribution substrate, a connection substrate provided on the redistribution substrate to surround the first semiconductor chip as viewed in plan, and an inductor structure provided within a first region of the connection substrate and electrically connected to the first semiconductor chip through the redistribution substrate. The second package includes at least one outer terminal electrically connected to the first package. The outer terminal is provided on a second region of the connection substrate, and when viewed in plan, the first region and the second region are spaced apart from each other.