A transient liquid phase (TLP) composition includes a plurality of first high melting temperature (HMT) particles, a plurality of second HMT particles, and a plurality of low melting temperature (LMT) particles. Each of the plurality of first HMT particles have a core-shell structure with a core formed from a first high HMT material and a shell formed from a second HMT material that is different than the first HMT material. The plurality of second HMT particles are formed from a third HMT material that is different than the second HMT material and the plurality of LMT particles are formed from a LMT material. The LMT particles have a melting temperature less than a TLP sintering temperature of the TLP composition and the first, second, and third HMT materials have a melting point greater than the TLP sintering temperature.

According to an aspect of the present disclosure, a semiconductor device includes a base plate, a first semiconductor chip provided above the base plate, a bonding wire joined with the first semiconductor chip at a first joint part and having a curved part above the first joint part, a first sealing member provided from an upper surface of the base plate up to a height higher than the first joint part and lower than the curved part, the first sealing member covering the first joint part and a second sealing member provided on the first sealing member, covering the curved part, and having an elastic modulus lower than an elastic modulus of the first sealing member.

A cooler includes a top plate, one surface of which serves as a heat dissipation surface, a bottom plate disposed so as to face the top plate and having a larger thickness than that of the top plate, a plurality of fins provided between the top plate and the bottom plate, and a circumferential wall part provided so as to surround the plurality of fins along outer circumferential edges of the bottom plate. The plurality of fins and the outer circumferential wall part are provided between the top plate and the bottom plate and bonded to the heat dissipation surface of the top plate. A flow path for a coolant is formed by a space enclosed by the top plate, the bottom plate, the plurality of fins, and the circumferential wall part. The top plate has an electric potential higher than that of the bottom plate.

According to an aspect of the first disclosure, a semiconductor device includes a base plate, a case that surrounds a region immediately above the base plate, a semiconductor chip provided in the region, a sealing resin that fills the region and a barrier layer provided on the sealing resin, wherein the barrier layer has a first surface facing the base plate, a second surface opposite to the first surface, and a convex part protruding upward from the second surface, the first surface has a longer distance to the base plate as getting farther from the center, the convex part is provided avoiding the center, and a height of the convex part is greater than a distance in a thickness direction of the barrier layer between a portion of the first surface immediately below the convex part and a portion of the first surface provided at the center.

A semiconductor apparatus includes: an insulating substrate including a circuit pattern; a semiconductor device mounted on the insulating substrate and electrically connected to the circuit pattern; a case storing the insulating substrate and the semiconductor device; and an electrode attached to the case, wherein a tip surface of the electrode is jointed to the circuit pattern with solder, the electrode is brought into contact with and pushed against the circuit pattern by the case, and a projection is provided on the tip surface.

A vehicle power conversion apparatus according to the present disclosure includes a housing attached to a vehicle, a cooler including a heat receiver that is disposed on the side near the housing and has a heated surface provided with semiconductor elements, and a heat radiator disposed on a surface of the heat receiver opposite to the heated surface, and a position adjusting member to adjust the position of the end of the heat radiator distant from the housing in the direction approaching rigging limit of the vehicle.

According to the present disclosure, a semiconductor apparatus comprises an insulating substrate. A porous material is directly bonded to the insulating substrate. And a semiconductor device is bonded to the porous material via a bonding material. The bonding material contains metal nanoparticles.

This power semiconductor module includes: a bus bar to which each of first main electrodes of semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connected to each of gate pads of the semiconductor switching elements by a bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm.

In a semiconductor device, a semiconductor element includes a semiconductor substrate, a surface electrode and a protective film. The semiconductor substrate has an active region and an outer peripheral region. The surface electrode includes a base electrode disposed on a front surface of the semiconductor substrate and a connection electrode disposed on the base electrode. The protective film covers a peripheral end portion of the base electrode and an outer peripheral edge of the connection electrode. The protective film has an opening to expose the connection electrode so as to enable a solder connection. A boundary between the outer peripheral edge of the connection electrode and the protective film is located at a position corresponding to the outer peripheral region in a plan view.

The present invention has an object to enhance manufacturability of a pressure-contact-type semiconductor device. A pressure-contact-type semiconductor device according to the present invention includes: a semiconductor chip, the semiconductor chip including a guard ring and a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first main surface of the semiconductor chip; a conductive pattern being formed on the first external electrode; a contact pin connecting the gate signal input/output part and the conductive pattern; a plate-like electrode being provided on the second main surface of the semiconductor chip; a disc spring being provided on the plate-like electrode; and a second external electrode being provided on the disc spring, the second external electrode and the first external electrode interposing the semiconductor chip.