A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.

A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.

A method of manufacturing a light emitting device includes: providing a substrate including a pair of connection terminals, the connection terminals each having a protruding portion at least on a first main surface of the connection terminal; providing a light emitting element on the protruding portion, the light emitting element having a semiconductor laminate and a pair of electrodes on a same surface of the semiconductor laminate; bonding the pair of the electrodes of the light emitting element and the pair of the connection terminals, respectively, by a molten material; and embedding a surface of the protruding portion of the connection terminals, a surface of the molten material, and a space between the substrate and the light emitting element into a light reflecting member.

A method of manufacturing a light emitting device includes: providing a substrate including a pair of connection terminals, the connection terminals each having a protruding portion at least on a first main surface of the connection terminal; providing a light emitting element on the protruding portion, the light emitting element having a semiconductor laminate and a pair of electrodes on a same surface of the semiconductor laminate; bonding the pair of the electrodes of the light emitting element and the pair of the connection terminals, respectively, by a molten material; and embedding a surface of the protruding portion of the connection terminals, a surface of the molten material, and a space between the substrate and the light emitting element into a light reflecting member.

An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D.sub.2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10.sup.−1 Ωmm.sup.2/m has been applied. The thickness (D.sub.9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 μm. For an optoelectronic device (LV), the leadframe (LF) has a metallic material with an aluminium carrier (1), on the surface (A) of which a metallic joining layer (FA) not consisting of aluminium has been applied locally at the bonding site (SP) of an electronic surface-mounted device (SMD) to a wire (D).

The present invention provides a packaging method and a packaging structure for a cascode power electronic device, in which a hetero-multiple chip scale package is used to replace the traditional die bonding and wire bonding packaging method. The cascode power electronic device can reduce the inductance resistance and thermal resistance of the connecting wires and reduce the size of the package; and increase the switching frequency of power density. The chip scale package of the present invention uses more than one gallium nitride semiconductor die, more than one diode, and more than one metal oxide semiconductor transistor. The package structure can use TO-220, quad flat package or other shapes and sizes; the encapsulation process of the traditional epoxy molding compounds can be used in low-power applications; and the encapsulation process of ceramic material can be used in high-power applications.

An illumination apparatus comprises a plurality of LEDs aligned to an array of directional optical elements wherein the LEDs are substantially at the input aperture of respective optical elements. An electrode array is formed on the array of optical elements to provide at least a first electrical connection to the array of LED elements. Advantageously such an arrangement provides low cost and high efficiency from the directional LED array.

An illumination apparatus comprises a plurality of LEDs aligned to an array of directional optical elements wherein the LEDs are substantially at the input aperture of respective optical elements. An electrode array is formed on the array of optical elements to provide at least a first electrical connection to the array of LED elements. Advantageously such an arrangement provides low cost and high efficiency from the directional LED array.

A light emitting device includes a substrate, a light emitting element, and a protective element. The substrate includes a support member and a plurality of wirings disposed on an upper surface of the support member. The substrate has a first side extending in a first direction and a second side opposite to the first side. The light emitting element is disposed on an upper surface of the substrate, and the protective element is disposed on the upper surface of the substrate. The plurality of wirings has a plurality of external connecting portions disposed adjacent to the first side and arranged in the first direction in a plan view. The protective element is disposed between the light emitting element and the second side of the substrate.

A reflective composite material with a carrier consisting of aluminum with, on one side (A) of the carrier, an interlayer made of aluminum oxide, and with, above the interlayer, an optically active reflection-boosting multilayer system. In order to provide a high-reflectivity composite material of this kind which exhibits improved electrical connectivity when surface-mounting procedures are used, it is proposed that the thickness of the interlayer is in the range 5 nm to 200 nm, and that a layer of a metal or a metal alloy has been applied superficially on side (B) of the carrier that is opposite to the optically active reflection-boosting multilayer system, where the electrical resistivity at 25° C. of the metal or metal alloy is at most 1.2×10.sup.−1 Ωmm.sup.2/m, where the thickness of the layer applied superficially is in the range 10 nm to 5.0 μm.