A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part comprises a first stepped portion and a second stepped portion facing the first stepped portion; a first semiconductor laser element disposed on the bottom face and located between the first stepped portion and the second stepped portion in a top view, wherein the first semiconductor laser element is configured to emit light towards the second stepped portion; a first wiring region located on the first stepped portion; and one or more first wires, each having a first end that is connected to the first wiring region. At least one of the one or more first wires is electrically connected to the first semiconductor laser element.

Provided is a semiconductor device capable of maintaining the flatness of a glass substrate and sufficiently protecting an end portion of the glass substrate. A semiconductor device according to one aspect of the present disclosure includes: a glass substrate including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface; wirings provided on the first and second surfaces; a first insulating film that covers the first surface; a second insulating film that covers the second surface; and a third insulating film that covers the first side surface, the third insulating film being continuous with at least one of the first and second insulating films.

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

Provided are methods for Silicon Photomultiplier (SiPM)-based sensor for low-level fusion, which can include mitigating a Light Detection and Ranging (LiDAR) sensor processing path to provide high-confidence, low-level fusion between the camera (passive) and LiDAR (active) imaging. Systems and computer program products are also provided.

A method for manufacturing a semiconductor device provided with a semiconductor chip includes: disposing the semiconductor chip such that an electrode of the semiconductor chip is abutted against a peeling portion provided on a substrate; forming an anchor portion, which defines a position of the semiconductor chip and has flexibility so as to be freely bendable, such that the anchor portion covers the peeling portion and the semiconductor chip; forming a sealing portion that is abutted against the anchor portion and has flexibility so as to be freely bendable; and separating the peeling portion and the substrate from the semiconductor chip and the anchor portion and exposing the electrode of the semiconductor chip. The anchor portion is formed by at least one of a vapor phase deposition method, a spray coating method, and an inkjet method.

The invention relates to a component comprising a first part, a second part, a housing body, and a first electrode, wherein the housing body encloses the first electrode in lateral directions at least in some regions. The first electrode has a front face and a rear face facing away from the front face, and the front and rear faces are free of a cover produced by a material of the housing body at least in some regions. The first part is arranged on the front face, and the second part is arranged on the rear face, and both the first and second parts are connected to the first electrode in an electrically conductive manner. The first electrode is designed to be continuous and is arranged between the first part and the second part in the vertical direction. Also described is a method for producing the component.

A first semiconductor device includes a first substrate including a first electrode and a second electrode at a first surface side of the first substrate opposite to a light incident surface side of the first substrate; and a second substrate including a photodiode, a transfer transistor, and a third electrode and a fourth electrode at a first surface side of the second substrate facing the first surface of the first substrate, and a plurality of transistors.

A first semiconductor device includes a first substrate including a first electrode and a second electrode at a first surface side of the first substrate opposite to a light incident surface side of the first substrate; and a second substrate including a photodiode, a transfer transistor, and a third electrode and a fourth electrode at a first surface side of the second substrate facing the first surface of the first substrate, and a plurality of transistors.

Hybrid bonded structures and methods of manufacture are described. In an embodiment, a hybrid bonded structure includes a first plurality of first conductive bonding regions of a first substrate stack bonded directly to a second plurality of second conductive bonding regions of a second substrate stack, and a first dielectric layer of the first substrate stack bonded to a second dielectric layer of the second substrate stack with an intermediate organic adhesive layer.