In various embodiments, an optoelectronic component is provided. The optoelectronic component includes a carrier body. An optoelectronic layer structure is formed above the carrier body and has at least one contact region for electrically contacting the optoelectronic layer structure. A covering body is arranged above the optoelectronic layer structure. At least one contact cutout in which at least one part of the contact region is exposed extends through the carrier body and/or the covering body. At least one plug element for electrically contacting the optoelectronic component is arranged at least partly in the contact cutout and tightly closes the contact cutout. A contact medium, via which the plug element is electrically coupled to the contact region, is arranged in the contact cutout.

In various embodiments, an optoelectronic component is provided. The optoelectronic component includes a carrier body. An optoelectronic layer structure is formed above the carrier body and has at least one contact region for electrically contacting the optoelectronic layer structure. A covering body is arranged above the optoelectronic layer structure. At least one contact cutout in which at least one part of the contact region is exposed extends through the carrier body and/or the covering body. At least one plug element for electrically contacting the optoelectronic component is arranged at least partly in the contact cutout and tightly closes the contact cutout. A contact medium, via which the plug element is electrically coupled to the contact region, is arranged in the contact cutout.

The present disclosure describes optical element stack assemblies that include multiple substrates stacked one over another. At least one of the substrates includes an optical element, such as a DOE, on its surface. The stack assemblies can be fabricated, for example, in wafer-level processes.

The present disclosure describes optical element stack assemblies that include multiple substrates stacked one over another. At least one of the substrates includes an optical element, such as a DOE, on its surface. The stack assemblies can be fabricated, for example, in wafer-level processes.

A high density region for a low density circuit. At least a first liquid dielectric layer is deposited on the first surface of a first circuitry layer. The dielectric layer is imaged to create plurality of first recesses. Surfaces of the first recesses are plated electro-lessly with a conductive material to form first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A plating resist is applied. A conductive material is electro-plated to the first conductive structure to substantially fill the first recesses, and the plating resist is removed.

A three-dimensional structure in which a wiring is provided on a surface is provided. At least a part of the surface of the three-dimensional structure includes an insulating layer containing filler. A recessed gutter for wiring is provided on the surface of the three-dimensional structure, and at least a part of a wiring conductor is embedded in the recessed gutter for wiring.

A molded resin body for surface-mounted light-emitting device has a cured resin body integrally molded with a plurality of leads and a concave portion to which the plurality of leads are exposed at the bottom portion, in which the ten-point average roughness (Rz) of the opening surface of the concave portion is 1 μm to 10 μm, the glass transition temperature of the cured resin body is 10° C. or higher and the glass transition temperature is a value measured using a thermomechanical analyzer (TMA) under the conditions of a temperature range of −50 to 250° C., a temperature elevation rate of 5° C./min, and a sample size length of 1 to 5 mm, and the optical reflectance at 460 nm of the opening surface of the concave portion is 80% or more and the optical reflectance retention rate on the opening surface after heating the molded resin body at 180° C. for 72 hours is 90% or more.

A molded resin body for surface-mounted light-emitting device has a cured resin body integrally molded with a plurality of leads and a concave portion to which the plurality of leads are exposed at the bottom portion, in which the ten-point average roughness (Rz) of the opening surface of the concave portion is 1 μm to 10 μm, the glass transition temperature of the cured resin body is 10° C. or higher and the glass transition temperature is a value measured using a thermomechanical analyzer (TMA) under the conditions of a temperature range of −50 to 250° C., a temperature elevation rate of 5° C./min, and a sample size length of 1 to 5 mm, and the optical reflectance at 460 nm of the opening surface of the concave portion is 80% or more and the optical reflectance retention rate on the opening surface after heating the molded resin body at 180° C. for 72 hours is 90% or more.

Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or 5 copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.

Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or 5 copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.