In one example, an electronic assembly comprises a first semiconductor device and a second semiconductor device. Each of the first semiconductor device and the second semiconductor devices comprises a substrate comprising a top surface and a conductive structure, an electronic component over the top surface of the substrate, a dielectric material over the top surface of the substrate and contacting a side of the electronic component, a substrate tab at an end of substrate and not covered by the dielectric material, wherein the conductive structure of the substrate is exposed at the substrate tab, and an interconnect electrically coupled to the conductive structure at the substrate tab of the first semiconductor device and the conductive structure at the substrate tab of the second semiconductor device. Other examples and related methods are also disclosed herein.

An electric package device is provided, including a first chip and a second chip. The first chip includes a first conductive pad. The second chip includes a second conductive pad. The second conductive pad couples to the first conductive pad through a connection wire. In some embodiments, the first chip includes a first signal control circuit that receives, in response to a selection signal, one of multiple input signals as a first signal, filters the first signal, and outputs the filtered first signal, as a second signal, from the first conductive pad to the second conductive pad.

A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.

A semiconductor device package includes a dielectric layer and a stacking conductive structure. The dielectric layer includes a first surface. The stacking conductive structure is disposed on the first surface of the dielectric layer. The stacking conductive structure includes a first conductive layer disposed on the first surface of the dielectric layer, and a second conductive layer stacked on the first conductive layer. A first surface roughness of the first surface of the dielectric layer is larger than a second surface roughness of a top surface of the first conductive layer, and the second surface roughness of the top surface of the first conductive layer is larger than a third surface roughness of a top surface of the second conductive layer.

A field effect transistor includes: a semiconductor region including a first inactive region, an active region, and a second inactive region arranged side by side in a first direction; a gate electrode, a source electrode, and a drain electrode on the active region; a gate pad on the first inactive region; a gate guard on and in contact with the semiconductor region, the gate guard being apart from the gate pad and located between an edge on the first inactive region side of the semiconductor region and the gate pad; a drain pad on the second inactive region; a drain guard on and in contact with the semiconductor region, the drain guard being apart from the drain pad and located between an edge on the second inactive region side of the semiconductor region and the drain pad; and a metal film electrically connected to the gate guard.

A semiconductor device includes a plurality of resistive films arranged on an interlayer dielectric film. Each of the plurality of resistive films extends in a first direction in plan view. The plurality of resistive films are arranged spaced apart in a second direction orthogonal to the first direction in plan view. The plurality of resistive films are divided into a first group, a second group, and a third group. The first group is located between the second group and the third group in the second direction. A second width variation amount of each of the plurality of second resistive films belonging to the second group and a third width variation amount of each of the plurality of third resistive films belonging to the third group are larger than a first width variation amount of each of the plurality of first resistive films belonging to the first group.

In one example, an electronic assembly comprises a first semiconductor device and a second semiconductor device. Each of the first semiconductor device and the second semiconductor devices comprises a substrate comprising a top surface and a conductive structure, an electronic component over the top surface of the substrate, a dielectric material over the top surface of the substrate and contacting a side of the electronic component, a substrate tab at an end of substrate and not covered by the dielectric material, wherein the conductive structure of the substrate is exposed at the substrate tab, and an interconnect electrically coupled to the conductive structure at the substrate tab of the first semiconductor device and the conductive structure at the substrate tab of the second semiconductor device.

Other examples and related methods are also disclosed herein.

A semiconductor device includes a semiconductor chip mounted on an upper surface of a base substrate and having an output pad, a first capacitive component mounted on the upper surface of the base substrate and having one end electrically connected to the base substrate, a frame provided on the base substrate and made of a dielectric surrounding the semiconductor chip and the first capacitive component, an output terminal provided on the frame, a wiring pattern provided on an upper surface of the frame, a first bonding wire electrically connecting the output pad to the output terminal, a second bonding wire electrically connecting another end of the first capacitive component to a first region in the wiring pattern, and a third bonding wire electrically connecting the output pad to a second region different from the first region in the wiring pattern.

A method for manufacturing a semiconductor device includes forming a lead frame assembly in which a first side wall portion and a second side wall portion, both made of a resin, are joined to each other in a state of having a metal lead frame sandwiched therebetween; applying a sintering metal paste to a disposition region of the lead frame assembly and disposing the lead frame assembly on the sintering metal paste; and sintering the sintering metal paste between a metal base of the semiconductor device and the lead frame assembly to join the base and the lead frame assembly to each other.

A high-frequency module 1a includes: a circuit board 2; a first component 3a, which has characteristics likely to be changed by heat, and a second component 3b, which generates heat, that are mounted on an upper surface 20a of the circuit board 2; a sealing resin layer 4 configured to cover each of the components 3a and 3b and a component 3c; a shield film 5 configured to cover a surface of the sealing resin layer 4; and a heat dissipation member 6 disposed above an upper surface 4a of the sealing resin layer 4. A recessed portion 11 is formed in the upper surface 4a of the sealing resin layer 4 as viewed in a direction perpendicular to the upper surface 20a of the circuit board 2. The recessed portion 11 can prevent the heat generated from the second component 3b from affecting the first component 3a.