The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.

A package structure includes a redistribution layer, a chip assembly, a plurality of solder balls, and a molding compound. The redistribution layer includes redistribution circuits, photoimageable dielectric layers, conductive through holes, and chip pads. One of the photoimageable dielectric layers located on opposite two outermost sides has an upper surface and openings. The chip pads are located on the upper surface and are electrically connected to the redistribution circuits through the conductive through holes. The openings expose portions of the redistribution circuits to define solder ball pads. Line widths and line spacings of the redistribution circuits decrease in a direction from the solder ball pads towards the chip pads. The chip assembly is disposed on the chip pads and includes at least two chips with different sizes. The solder balls are disposed on the solder ball pads, and the molding compound at least covers the chip assembly.

A packaged integrated circuit includes a core structure with a cavity therein; a component accommodated in the cavity; an electrically insulating structure formed over the core structure and the component; a partially electrically insulating carrier structure formed below the core structure and the component; and an electrically conducting redistribution arrangement formed at least partially within the carrier structure. The redistribution arrangement includes conductor structures each having a first element extending through the carrier structure and electrically connecting a contact of the component and a second element below the carrier structure. A part of the second element is a contact pad for electrically connecting the redistribution arrangement with external circuitry. The carrier structure includes a polyimide layer and an adhesive layer. The adhesive layer is directly attached to an upper surface of the polyimide layer and to a lower surface of the core structure and a lower surface of the component.

A semiconductor device includes an active silicon connection layer therewithin to integrate a die. A power terminal of a die functional module within the die is connected to a connection point lead-out terminal through a silicon stack connection point. A power gating circuit is arranged within the silicon connection layer. A power output terminal of the power gating circuit within the silicon connection layer is connected to the corresponding connection point lead-out terminal of the die and thus connected to the power terminal of the die function module, so that the power gate circuit can control power supply to the die function module according to an obtained sleep control signal, and the idle die function module can enter into a sleep state to save power.

An integrated circuit device having separate dies for programmable logic fabric and circuitry to operate the programmable logic fabric are provided. A first integrated circuit die may include field programmable gate array fabric. A second integrated circuit die may be coupled to the first integrated circuit die. The second integrated circuit die may include fabric support circuitry that operates the field programmable gate array fabric of the first integrated circuit die.

In one embodiment, a first die comprises: a first die-to-die adapter to communicate with first protocol layer circuitry via a flit-aware die-to-die interface (FDI) and first physical layer circuitry via a raw die-to-die interface (RDI), where the first die-to-die adapter is to receive message information comprising first information of a first interconnect protocol; and the first physical layer circuitry coupled to the first die-to-die adapter. The first physical layer circuitry may be configured to receive and output the first information to a second die via an interconnect, the first physical layer circuitry comprising a plurality of modules, each of the plurality of modules comprising an analog front end having transmitter circuitry and receiver circuitry. Other embodiments are described and claimed.

Embodiments that allow both high density and low density interconnection between microelectronic die and motherboard via. Direct Chip Attach (DCA) are described. In some embodiments, microelectronic die have a high density interconnect with a small bump pitch located along one edge and a lower density connection region with a larger bump pitch located in other regions of the die. The high density interconnect regions between die are interconnected using an interconnecting bridge made out of a material that can support high density interconnect manufactured into it, such as silicon. The lower density connection regions are used to attach interconnected die directly to a board using DCA. The high density interconnect can utilize current Controlled Collapsed Chip Connection (C4) spacing when interconnecting die with an interconnecting bridge, while allowing much larger spacing on circuit boards.

A display apparatus includes a display panel including a first surface and a second surface, where a display area which displays images is arranged in the first surface; a driving panel arranged on the display panel and including a first surface and a second surface; and a filling portion filled between the display panel and the driving panel. The display panel and the driving panel are stacked in a vertical direction in a cross-sectional view, and signal lines of the display panel may be electrically connected to signal lines of the driving panel, respectively, through a contact hole penetrating the display area and the driving panel.

Methods and systems for a thin bonded interposer package are disclosed and may, for example, include bonding a semiconductor die to a first surface of a substrate, forming contacts on the first surface of the substrate, encapsulating the semiconductor die, formed contacts, and first surface of the substrate using a mold material while leaving a top surface of the semiconductor die not encapsulated by mold material, forming vias through the mold material to expose the formed contacts. A bond line may be dispensed on the mold material and the semiconductor die for bonding the substrate to an interposer. A thickness of the bond line may be defined by standoffs formed on the top surface of the semiconductor die.

Apparatus and methods remove a voltage offset from an electrical signal, specifically a biomedical signal. A signal is received at a first operational amplifier and is amplified by a gain. An amplitude of the signal is monitored, by a first pair of diode stages coupled to an output of the first operational amplifier, for the voltage offset. The amplitude of the signal is then attenuated by the first pair of diode stages and a plurality of timing banks. The attenuating includes limiting charging, by the first pair of diode stages, of the plurality of timing banks and setting a time constant based on the charging. The attenuating removes the voltage offset persisting at a threshold for a duration of at least the time constant. Saturation of the signal is limited to a saturation recovery time while the saturated signal is gradually pulled into monitoring range over the saturation recovery time.