Packaged integrated circuit with interposing functionality and method for manufacturing such a packaged integrated circuit
11605569 · 2023-03-14
Assignee
Inventors
Cpc classification
H01L2224/92144
ELECTRICITY
H05K3/4655
ELECTRICITY
H01L2224/96
ELECTRICITY
H01L2224/97
ELECTRICITY
H01L24/97
ELECTRICITY
H01L23/5389
ELECTRICITY
H05K3/4602
ELECTRICITY
H01L21/568
ELECTRICITY
H01L2224/83192
ELECTRICITY
H01L24/19
ELECTRICITY
H01L2224/32225
ELECTRICITY
H01L2224/04105
ELECTRICITY
H01L23/5226
ELECTRICITY
H01L2224/97
ELECTRICITY
H05K1/186
ELECTRICITY
H01L2224/82
ELECTRICITY
H01L2224/82
ELECTRICITY
H01L23/49827
ELECTRICITY
International classification
H01L23/498
ELECTRICITY
H01L23/14
ELECTRICITY
H01L21/3205
ELECTRICITY
H01L23/538
ELECTRICITY
H05K1/18
ELECTRICITY
Abstract
A packaged integrated circuit includes a core structure with a cavity therein; a component accommodated in the cavity; an electrically insulating structure formed over the core structure and the component; a partially electrically insulating carrier structure formed below the core structure and the component; and an electrically conducting redistribution arrangement formed at least partially within the carrier structure. The redistribution arrangement includes conductor structures each having a first element extending through the carrier structure and electrically connecting a contact of the component and a second element below the carrier structure. A part of the second element is a contact pad for electrically connecting the redistribution arrangement with external circuitry. The carrier structure includes a polyimide layer and an adhesive layer. The adhesive layer is directly attached to an upper surface of the polyimide layer and to a lower surface of the core structure and a lower surface of the component.
Claims
1. A method for manufacturing an integrated circuit package, the method comprising: providing a core structure having a through passage cavity formed therein; forming a temporary carrier structure at a lower surface of the core structure; placing an integrated circuit component in the through passage cavity, the integrated circuit component comprising a lower structured metal layer protruding from a lower surface of the integrated circuit component, such that the lower surface of the integrated circuit component is directly attached to the temporary carrier structure and the lower structured metal layer of the integrated circuit component is embedded in the temporary carrier structure; forming an at least partially electrically insulating cover structure over the core structure and the integrated circuit component, after forming the cover structure over the core structure and the integrated circuit component, removing the temporary carrier structure from the core structure and the integrated circuit component, and adhering a polyimide layer below the core structure, the through passage cavity and the integrated circuit component by means of an adhesive layer, wherein the polyimide layer and the adhesive layer form an at least partially electrically insulating carrier structure; wherein, after the at least partially electrically insulating carrier structure has been formed, forming a redistribution arrangement at least partially within the at least partially electrically insulating carrier structure by a photolithography procedure with a high spatial resolution to structure the polyimide layer.
2. The method as set forth in claim 1, wherein providing the core structure comprises forming a structured metal layer along a first main surface of the core structure.
3. The method as set forth in claim 2, wherein providing the core structure comprises forming a structured metal layer along a second main surface of the core structure opposed to the first main surface.
4. The method as set forth in claim 1, wherein the redistribution arrangement comprises at least two conductor structures each having a first conductor element extending through the at least partially electrically insulating carrier structure and electrically contacting one contact element of at least two contact elements of the lower structured metal layer of the integrated circuit component; and a second conductor element being formed below the at least partially electrically insulating carrier structure, wherein at least a part of the second conductor element is configured for electrically contacting the redistribution arrangement with external circuitry, wherein a first spacing between the two contact elements of the lower structured metal layer of the integrated circuit component is smaller than a second spacing between the two second conductor elements.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
DETAILED DESCRIPTION OF ILLUSTRATED EMBODIMENTS
(3) The illustrations in the drawings are schematically presented. It is noted that in different figures, similar or identical elements or features are provided with the same reference signs or with reference signs, which are different from the corresponding reference signs only within the first digit. In order to avoid unnecessary repetitions elements or features, which have already been elucidated with respect to a previously described embodiment, are not elucidated again at a later position of the description.
(4) Further, spatially relative terms, such as “front” and “back”, “above” and “below”, “left” and “right”, et cetera are used to describe an element's relationship to one or more other elements as illustrated in the figures. Thus, the spatially relative terms may apply to orientations in use which differ from the orientation depicted in the figures. Obviously, all such spatially relative terms refer to the orientation shown in the figures only for ease of description and are not necessarily limiting as an apparatus according to an embodiment of the invention can assume orientations different than those illustrated in the figures when in use.
(5)
(6) As can be taken from
(7) According to the embodiment described here, there is provided an upper structured metal layer 112, which is formed on the top surface of the core structure 110. This upper structured metal layer 112 may be used in a known manner for forming conductor paths and/or contact pads for contacting the embedded component 120 with external and/or internal circuitry.
(8) The bottom of the cavity 110a, which has been originally formed as the so-called through passage cavity is closed by a carrier structure 140. In between the carrier structure 140 and a bottom surface of the core structure 100 there is formed a lower structured metal layer 114, which may also be used for forming conductor paths and/or contact pads.
(9) The carrier structure 140 comprises a stack of electrically conducting and electrically insulating layers. Specifically, according to the embodiment described here the carrier structure 140 comprises an adhesive layer 144 being located at the bottom surface of the core structure 110 and, within the region of the cavity 110a at the bottom surface of the component 120. Further, within the regions of the “pieces” of the lower structured metal layer 114 the adhesive layer 144 adheres to these “pieces”. Below the adhesive layer 144 there is formed a polyimide layer 142. A stickiness of the adhesive layer 144 ensures that there is a reliable mechanical contact between the polyimide layer 142 and in particular the core structure 110 and (or respectively) the embedded integrated circuit component 120. Further, within the carrier structure 140 and below the polyimide layer 142 there is formed a metal layer 146, which according to the embodiment described here is copper layer 146.
(10)
(11) As can be further taken from
(12) Apart from the above mentioned second conductor element 164, each conductor structure 160 comprises a second conductor element 164 which corresponds to pieces of the lower structured metal layer 114. Further, each conductor structure 160 comprises one first conductor element 162, which is realized by means of a metallized via 162 and which electrically connects the respective second conductor element 164 with a corresponding further contact pad 166, which corresponds to one of the above mentioned “pieces” of the lower structured metal layer 114.
(13)
(14)
(15) As can be taken from a comparison between
(16) As can be taken from
(17) Next, as can be taken from
(18) As can be taken from the
(19) It should be noted that the term “comprising” does not exclude other elements or steps and the use of articles “a” or “an” does not exclude a plurality. Also, elements described in association with different embodiments may be combined.
LIST OF REFERENCE SIGNS
(20) 100 packaged integrated circuit 110 core structure 110a cavity 110b side gap 112 upper structured metal layer 114 lower structured metal layer 120 integrated circuit component 130 cover structure 140 carrier structure 142 polyimide layer 144 adhesive layer 146 metal layer/copper layer 150 redistribution arrangement 160 conductor structure 162 first conductor element/metallized via 164 second conductor element/contact pad 166 third conductor element/further contact pad 200 packaged integrated circuit 270 temporary carrier structure