H01L2924/15312

SEMICONDUCTOR PACKAGE
20170243855 · 2017-08-24 · ·

A semiconductor package including a mounting board, a first semiconductor chip on the mounting board, the first semiconductor chip having a first peripheral area, a second peripheral area, and a central area between the first and second peripheral areas, the central area having penetrating electrodes formed therein, a second semiconductor chip on the first peripheral area, the second semiconductor chip including a second pad on a top surface thereof, a third semiconductor chip on the second peripheral area, the third semiconductor chip including a third pad on a top surface thereof, and conductive wirings extending from the second and third pads, respectively, the conductive wirings electrically connected to the penetrating electrodes, respectively, may be provided.

Pin connector structure and method
09775242 · 2017-09-26 · ·

Embodiments pin connections, electronic devices, and methods are shown that include pin configurations to reduce voids and pin tilting and other concerns during pin attach operations, such as attachment to a chip package pin grid array. Pin head are shown that include features such as convex surfaces, a number of legs, and channels in pin head surfaces.

HIGH SPEED MEMORY SYSTEM INTEGRATION
20210391301 · 2021-12-16 ·

Embodiments disclosed herein include multi-die electronic packages. In an embodiment, an electronic package comprises a package substrate and a first die electrically coupled to the package substrate. In an embodiment, an array of die stacks are electrically coupled to the first die. In an embodiment the array of die stacks are between the first die and the package substrate. In an embodiment, individual ones of the die stacks comprise a plurality of second dies arranged in a vertical stack.

Radio frequency module and communication device

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier configured to amplify a transmission signal; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier and the PA control circuit are stacked on the first principal surface, and the first circuit component is disposed on the second principal surface.

Circuit board with phase change material

Various circuit board embodiments are disclosed. In one aspect, an apparatus is provided that includes a circuit board and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board.

ANTENNA MODULES EMPLOYING THREE-DIMENSIONAL (3D) BUILD-UP ON MOLD PACKAGE TO SUPPORT EFFICIENT INTEGRATION OF RADIO-FREQUENCY (RF) CIRCUITRY, AND RELATED FABRICATION METHODS
20230268637 · 2023-08-24 ·

Antenna modules employing three-dimensional (3D) build-up on mold package to support efficient integration of radio-frequency (RF) circuitry, and related fabrication methods. The antenna module includes a RF transceiver whose circuitry is split over multiple semiconductor dies (“dies”) so different semiconductor devices can be formed in different semiconductor structures. The antenna module is provided as a 3D build-up on mold package to reduce lengths of die-to-die (D2D) interconnections between circuits in different dies. First and second die packages that include respective first and second dies encapsulated in respective first and second mold layers are coupled to each other in a vertical direction in a 3D stacked arrangement with active faces of the first and second dies facing each other to provide a reduced distance between the active faces of the first and second dies. An antenna is stacked on the second die package to provide an antenna(s) for the antenna module.

Thermals for packages with inductors
11335618 · 2022-05-17 · ·

An apparatus is provided which comprises: one or more pads comprising metal on a first substrate surface, the one or more pads to couple with contacts of an integrated circuit die, one or more substrate layers comprising dielectric material, one or more conductive contacts on a second substrate surface, opposite the first substrate surface, the one or more conductive contacts to couple with contacts of a printed circuit board, one or more inductors on the one or more substrate layers, the one or more inductors coupled with the one or more conductive contacts and the one or more pads, and highly thermally conductive material between the second substrate surface and a printed circuit board surface, the highly thermally conductive material contacting the one or more inductors. Other embodiments are also disclosed and claimed.

Microelectronic package with solder array thermal interface material (SA-TIM)

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

Systems and methods for providing an interface on a printed circuit board using pin solder enhancement

Systems and methods for applying solder to a pin. The methods comprising: disposing a given amount of solder on a non-wettable surface of a planar substrate; aligning the pin with the solder disposed on the non-wettable surface of the planar substrate; inserting the pin in the solder; and/or performing a reflow process to cause the solder to transfer from the planar substrate to the pin.

Semiconductor device

A semiconductor device including a semiconductor chip having a first conduction element; a substrate having second and third conduction elements; and external connection elements configured to form an electrical path between the second and third conduction elements via the first conduction element.