An apparatus is provided which comprises: a processor die; a processor substrate having a region extended away from the processor die, wherein the processor die is mounted on the processor substrate, wherein the extended region has at least one signal interface which is connectable to a top-side connector; and an interposer coupled to the processor substrate and a motherboard.

A liquid jetting apparatus includes: a head unit including a first driving element, a second driving element, a first contact portion connected to the first driving element, and a second contact portion connected to the second driving element; and a wiring member including a flexible substrate, a first driving IC provided on the flexible substrate, a second driving IC provided on the flexible substrate, a first wire formed in the flexible substrate and connecting the first driving IC and the first contact portion, and a second wire formed in the flexible substrate and connecting the second driving IC and the second contact portion. A conductive part different from the first wire and the second wire is disposed in an area of the flexible substrate between the first driving IC and the second driving IC.

In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate which has a plurality of element regions and of which an element surface is covered by insulating film, the substrate is divided into element chips by exposing the substrate to a first plasma, element chips having first surface, second surface, and side surface are held spaced from each other on carrier, insulating film is in a state of being exposed, recessed portions are formed by retreating insulating film by exposing element chips to second plasma for ashing, and then recessed portions are covered by protection films by third plasma for formation of the protection film, thereby suppressing creep-up of the conductive material to side surface in the mounting step.

To provide a method of manufacturing an element chip in which creep-up of a conductive material can be suppressed in a mounting step. In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate which has a plurality of element regions and of which an element surface is covered by an insulating film, the substrate is divided into the element chips by exposing the substrate to a first plasma, the element chips having a first surface, a second surface, and a side surface are held spaced from each other on a carrier, and the side surface and the insulating film are in a state of being exposed.

Provided is an electronic component including a pad region including a plurality of pads extending along corresponding extension lines and arranged in a first direction, and a signal wire configured to receive a driving signal from the pad region, wherein the plurality of pads include a plurality of first pads arranged continuously and a plurality of second pads arranged continuously, and extension lines of the plurality of first pads substantially converge into a first point and extension lines of the plurality of second pads substantially converge into a second point different from the first point.

A module includes a printed circuit board (PCB) having a substrate, component pads on a top surface of the substrate, and contact pads formed on a bottom surface of the substrate. The module further includes a mold compound disposed over the PCB; an external shield disposed over a top surface of the mold compound and on side surfaces of the mold compound and the PCB, where the external shield is configured to provide shielding of at least one component connected to at least one component pad from electromagnetic radiation; and a back-spill barrier formed on the bottom of the substrate. The back-spill barrier surrounds the contact pads, and is configured to prevent the external shield from making contact with the contact pads.

Systems and techniques that facilitate hybrid readout packaging for quantum multichip bonding are provided. In various embodiments, an interposer can have a first quantum chip and a second quantum chip. In various aspects, a readout resonator (e.g., input/output port) of one or more qubits on the first quantum chip can be routed to an inner portion of the interposer. In various instances, the inner portion can be located between the first quantum chip and the second quantum chip. In various aspects, routing the readout resonator to the inner portion can reduce a number of crossings and/or intersections between input/output lines on the interposer and connection buses between qubits on the interposer.

Embodiments provide a method for manufacturing a microelectronic arrangement. The method includes a step of providing a chip-film module with a semiconductor chip and a film substrate having arranged thereon the semiconductor chip, wherein the chip-film module includes at least one coupling element spaced apart from the semiconductor chip and electrically coupled to at least one terminal of the semiconductor chip. Furthermore, the method includes a step of embedding the chip-film module into a printed circuit board, wherein, in embedding the chip-film module into the printed circuit board, the at least one coupling element of the chip-film module is coupled vertically [e.g. in the vertical direction [e.g. in relation to the printed circuit board]] [e.g. perpendicular to a surface of the printed circuit board] to at least one coupling counter element of the printed circuit board

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.