A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes: patch antennas, encapsulated by a first encapsulant; a device die, vertically spaced apart from the patch antennas, and electrically coupled to the patch antennas; and at least one redistribution structure, disposed between the patch antennas and the device die, and including electromagnetic bandgap (EBG) structures laterally surrounding each of the patch antennas.

A module includes a wiring board having a first main surface, a first component mounted on the first main surface and having a first height H1, a second component mounted on the first main surface and having a second height H2 lower than the first height H1, and a sealing resin arranged so as to cover the first component and the second component while covering the first main surface. Compared to a first connection terminal used for connection between the first component and the first main surface, a second connection terminal used for connection between the second component and the first main surface has a higher height. A surface of the first component on a side far from the first main surface and a surface of the second component on a side far from the first main surface are exposed from the sealing resin.

A power electronic interposer (10) for mounting a number of power transistor integrated circuit dice (14) can be made from a multi-layer ceramic process to provide an aluminum nitride body (11) having internal tungsten traces (30-35) to electrically connect die bond pads (17,18) to interposer contact pads (25,26) allowing connection to circuitry off of the interposer. The traces can include one or more groupings of parallely spaced apart conductive vias (30,31) that are connected in an electrically parallel manner to reduce electrical resistance and inductance in the circuitry. A network of cooling conduits and optional resistance temperature detector traces can be run through other parts of the body to provide controlled active cooling. The interposer can be formed separate ceramic bodies bonded together, to package the dice.

A module includes a wiring board having a first main surface, a first component mounted on the first main surface and having a first height H1, a second component mounted on the first main surface and having a second height H2 lower than the first height H1, and a sealing resin arranged so as to cover the first component and the second component while covering the first main surface. Compared to a first connection terminal used for connection between the first component and the first main surface, a second connection terminal used for connection between the second component and the first main surface has a higher height. A surface of the first component on a side far from the first main surface and a surface of the second component on a side far from the first main surface are exposed from the sealing resin.

Certain embodiments of the disclosure relate to an electronic device including a substrate having a shielding structure. The electronic device may include a first substrate, a second substrate, and a third substrate. The second substrate may include a first metal pattern connected to ground and including multiple first slits formed by removing a portion of the first metal pattern, each of the first slits having a cross shape, a second metal pattern connected to the ground and including multiple second slits formed by removing a portion of the second metal pattern, each of the second slits having the cross shape, and multiple ground vias extending through at least a portion of the second substrate so as to connect the first metal pattern of the first metal layer to the second metal pattern of the second metal layer. Various other embodiments are also disclosed.

A transistor amplifier includes a die comprising a gate terminal, a drain terminal, and a source terminal, a circuitry module on the transistor die and electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, and one or more passive electrical components on a first surface of the circuitry module. The one or more passive electrical components are electrically coupled between the gate terminal and a first lead of the transistor amplifier and/or between the drain terminal and a second lead of the transistor amplifier.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

The disclosure relates to systems, methods and devices providing a modular building block towards a fabrication process for embedding a multiplicity of active and passive components in a three-dimensional structure by either automated or otherwise robotic pick and place systems, or part of the actual build of the structure, hence accelerating the miniaturization of fully functional AMEs with smaller form factor. Specifically, the disclosure is directed to the use of additive manufacturing technologies and systems, methods and compositions for fabricating multilayer AMEs having integrated active integrated circuits, RF antennas, signal indicators such as LED, and passive components such as coils, capacitor, and resistors, embedded within the AMEs.

A liquid jetting apparatus includes: a head unit including a first driving element, a second driving element, a first contact portion connected to the first driving element, and a second contact portion connected to the second driving element; and a wiring member including a flexible substrate, a first driving IC provided on the flexible substrate, a second driving IC provided on the flexible substrate, a first wire formed in the flexible substrate and connecting the first driving IC and the first contact portion, and a second wire formed in the flexible substrate and connecting the second driving IC and the second contact portion. A conductive part different from the first wire and the second wire is disposed in an area of the flexible substrate between the first driving IC and the second driving IC.

Systems and techniques that facilitate hybrid readout packaging for quantum multichip bonding are provided. In various embodiments, an interposer can have a first quantum chip and a second quantum chip. In various aspects, a readout resonator (e.g., input/output port) of one or more qubits on the first quantum chip can be routed to an inner portion of the interposer. In various instances, the inner portion can be located between the first quantum chip and the second quantum chip. In various aspects, routing the readout resonator to the inner portion can reduce a number of crossings and/or intersections between input/output lines on the interposer and connection buses between qubits on the interposer.