A thermally enhanced semiconductor assembly with three dimensional integration includes a semiconductor chip electrically coupled to a wiring board by bonding wires. A heat spreader that provides an enhanced thermal characteristic for the semiconductor chip is disposed in a through opening of a wiring structure. Another wiring structure disposed on the heat spreader not only provides mechanical support, but also allows heat spreading and electrical grounding for the heat spreader by metallized vias. The bonding wires provide electrical connections between the semiconductor chip and the wiring board for interconnecting the semiconductor chip to terminal pads provided in the wiring board.

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first carrier, an encapsulant, a second carrier and one or more supporters. The first carrier has a first surface and a first side contiguous with the first surface. The encapsulant is on the first surface of the first carrier, and the first side of the first carrier is exposed from the encapsulant. The second carrier is disposed over the first carrier. The one or more supporters are spaced apart from the first side of the first carrier and connected between the first carrier and the second carrier. The one or more supporters are arranged asymmetrically with respect to the geographic center of the first carrier. The one or more supporters are fully sealed in the encapsulant.

A microelectronic package (10) can include lower and upper package faces (11, 12), lower terminals (25) at the lower package face, upper terminals (45) at the upper package face, first and second microelectronic elements (30) each having memory storage array function, and conductive interconnects (15) each electrically connecting at least one lower terminal with at least one upper terminal. The conductive interconnects (15) can include first conductive interconnects (15a) configured to carry address in formation, signal assignments of a first set (70a) of the first interconnects having (180) rotational symmetry about a theoretical rotational axis (29) with signal assignments of a second set (70b) of first interconnects. The conductive interconnects (15) can also include second conductive interconnects (15b) configured to carry data information, the position of each second conductive interconnect having (180) rotational symmetry about the rotational axis (29) with a position of a corresponding no-connect conductive interconnect (15d).

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A wiring board includes first insulating layers; first wiring layers; first via wirings; second insulating layers; second wiring layers; second via wirings; and a solder resist layer, wherein the first insulating layers are composed of non-photosensitive resin, wherein the second insulating layers, and the solder resist layer are composed of photosensitive resin, respectively, wherein the first surface of the uppermost first insulating layer and the first end surface of the first via wiring embedded in the uppermost first insulating layer are polished surfaces, wherein the first end surface of the first via wiring embedded in the uppermost first insulating layer is flush with the first surface of the uppermost first insulating layer, and wherein the wiring density of the second wiring layers is higher than the wiring density of the first wiring layers.

An embodiment device package includes a package substrate and a first and a second die bonded to the package substrate. The package substrate includes a build-up portion comprising a first contact pad and a plurality of bump pads. The package substrate further includes an organic core attached to the build-up portion, a through-via electrically connected to the first contact pad and extending through the organic core, a second contact pad on the through-via, a connector on the second contact pad, and a cavity extending through the organic core. The cavity exposes the plurality of bump pads, and the first die is disposed on the cavity and is bonded to the plurality of bump pads.

An integrated circuit package includes a substrate/interposer assembly having a plurality of conductive contacts and a plurality of conductive posts, such as copper posts, electrically coupled to at least some of the conductive contacts in the substrate/interposer assembly. The conductive posts are surrounded by a protective dielectric, such as a photoimageable dielectric (PID). An integrated circuit die may be disposed on the substrate/interposer assembly within an interior space surrounded by the dielectric. An additional integrated circuit die may be provided in a package-on-package (POP) configuration.

A substrate having an electronic component embedded therein includes a core structure including a first insulating body and core wiring layers and having a cavity penetrating through a portion of the first insulating body, an electronic component disposed in the cavity, an insulating material covering at least a portion of each of the core structure and the electronic component and disposed in at least a portion of the cavity, a wiring layer disposed on the insulating material, and a build-up structure disposed on the insulating material and including a second insulating body and a build-up wiring layer. A material of the first insulating body has a coefficient of thermal expansion (CTE) less than a CTE of the second insulating body, and the insulating material has a CTE less than a CTE of a material of the second insulating body.

A manufacturing method of a semiconductor package is provided as follows. A semiconductor die is provided, wherein the semiconductor die comprises a semiconductor substrate, an interconnection layer and a through semiconductor via, the interconnection layer is disposed on an active surface of the semiconductor substrate, the through semiconductor via penetrates the semiconductor substrate from a back surface of the semiconductor substrate to the active surface of the semiconductor substrate. An encapsulant is provided to laterally encapsulate the semiconductor die. A through encapsulant via penetrating through the encapsulant is formed.

A semiconductor package substrate includes a substrate having a bottom surface including a cavity structure defined therein. The cavity structure includes a floor surface. A passive device structure has at least a partial portion of the passive device structure disposed in the cavity structure. The passive device structure includes a first passive device and a second passive device that are each electrically connected to the floor surface of the cavity structure. At least partial portions of the first passive device and the second passive device vertically overlap each other.