An electronic package is provided, including: a first substrate having a first insulating portion; a first electronic component disposed on the first substrate; a second substrate having a second insulating portion and stacked on the first substrate through a plurality of conductive elements; and a first encapsulant formed between the first substrate and the second substrate. The first insulating portion of the first substrate differs in rigidity from the second insulating portion of the second substrate. As such, during a high temperature process, one of the first substrate and the second substrate pulls at the other to bend toward the same direction, thereby reducing warpage deviation of the overall electronic package. The present invention further provides a method for fabricating the electronic package.

A semiconductor device package includes a conductive layer, a first conductive pillar, a circuit layer and a second conductive pillar. The conductive layer has a first surface. The first conductive pillar is disposed on the first surface of the conductive layer. The circuit layer is disposed over the conductive layer. The circuit layer has a first surface facing the conductive layer. The second conductive pillar is disposed on the first surface of the circuit layer. The first conductive pillar is physically spaced apart from the second conductive pillar and electrically connected to the second conductive pillar.

A semiconductor package and a manufacturing method are provided. The semiconductor package includes a semiconductor die, an encapsulant and a through encapsulant via. The semiconductor die includes a semiconductor substrate, an interconnection layer and a through semiconductor via. The semiconductor substrate has an active surface and a back surface opposite to the active surface. The interconnection layer is disposed over the active surface of the semiconductor substrate. The through semiconductor via penetrates through the semiconductor substrate from the back surface of the semiconductor substrate to the active surface of the semiconductor substrate. The semiconductor die is encapsulated by the encapsulant. The through encapsulant via penetrates through the encapsulant.

Embodiments provide a method for manufacturing a microelectronic arrangement. The method includes a step of providing a chip-film module with a semiconductor chip and a film substrate having arranged thereon the semiconductor chip, wherein the chip-film module includes at least one coupling element spaced apart from the semiconductor chip and electrically coupled to at least one terminal of the semiconductor chip. Furthermore, the method includes a step of embedding the chip-film module into a printed circuit board, wherein, in embedding the chip-film module into the printed circuit board, the at least one coupling element of the chip-film module is coupled vertically [e.g. in the vertical direction [e.g. in relation to the printed circuit board]] [e.g. perpendicular to a surface of the printed circuit board] to at least one coupling counter element of the printed circuit board

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first carrier, an encapsulant, a second carrier and one or more supporters. The first carrier has a first surface and a first side contiguous with the first surface. The encapsulant is on the first surface of the first carrier, and the first side of the first carrier is exposed from the encapsulant. The second carrier is disposed over the first carrier. The one or more supporters are spaced apart from the first side of the first carrier and connected between the first carrier and the second carrier. The one or more supporters are arranged asymmetrically with respect to the geographic center of the first carrier. The one or more supporters are fully sealed in the encapsulant.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

A method of fabricating a semiconductor package includes forming a capping pattern on a chip pad of a semiconductor device. The semiconductor device includes a passivation pattern that exposes a portion of the chip pad, and the capping pattern covers the chip pad. The method further includes forming a redistribution layer on the capping pattern. Forming the redistribution layer includes forming a first insulation pattern on the capping pattern and the passivation pattern, forming a first opening in the first insulation pattern by performing exposure and development processes on the first insulation pattern, in which the first opening exposes a portion of the capping pattern, and forming a redistribution pattern in the first opening.

Disclosed is a semiconductor package including: a redistribution substrate; at least one passive device in the redistribution substrate, the passive device including a first terminal and a second terminal; and a semiconductor chip on a top surface of the redistribution substrate, the semiconductor chip vertically overlapping at least a portion of the passive device, wherein the redistribution substrate includes: a dielectric layer in contact with a first lateral surface, a second lateral surface opposite to the first lateral surface, and a bottom surface of the passive device; a lower conductive pattern on the first terminal; a lower seed pattern provided between the first terminal and the conductive pattern, and directly connected to the first terminal; a first upper conductive pattern on the second terminal and a first upper seed pattern provided between the second terminal and the first upper conductive pattern, and directly connected to the second terminal