A semiconductor device includes a metal base, a semiconductor chip provided on the metal base, and a frame work located on the metal base and having a metal pattern of an input pattern, an output pattern, and a bias pad. The bias pad and the input pattern or the output pattern are electrically connected by a conductor located on the frame work. The conductor has a characteristic of isolation at a frequency around an input signal or an output signal of the semiconductor device.

A process of assembling a semiconductor device is disclosed. The process includes steps of arraying metal bases on a carrier; applying sintered metal paste simultaneously onto the bases; disposing a substrate simultaneously onto the sintered metal paste where the substrate includes side walls corresponding to the bases and a wiring layer common the bases; and volatilizing solvent contained in the sintered metal paste.

The disclosure provides a wiring structure of a glass substrate used between a demultiplexer MUX and an integrated circuit IC. The siring structure includes a plurality of connecting lines, two ends of each connecting line are connected to the MUX and the IC, and a predetermined spacing is reserved between any two adjacent connecting lines. Wherein one or more conductive convex teeth are provided on at least one connecting line, and a predetermined distance is reserved between each convex tooth on any one of the connecting lines and an adjacent connecting line thereof or each convex tooth on the adjacent connecting line. The disclosure also provides a glass substrate and a display device. Performing the disclosure may reduce the resistance of the wiring in the present limited wiring space and improve the charging effect of the glass substrate.

A process of assembling a semiconductor device is disclosed. The process includes steps of arraying metal bases on a carrier; applying sintered metal paste simultaneously onto the bases; disposing a substrate simultaneously onto the sintered metal paste where the substrate includes side walls corresponding to the bases and a wiring layer common the bases; and volatilizing solvent contained in the sintered metal paste.

The disclosure provides a wiring structure of a glass substrate used between a demultiplexer MUX and an integrated circuit IC. The siring structure includes a plurality of connecting lines, two ends of each connecting line are connected to the MUX and the IC, and a predetermined spacing is reserved between any two adjacent connecting lines. Wherein one or more conductive convex teeth are provided on at least one connecting line, and a predetermined distance is reserved between each convex tooth on any one of the connecting lines and an adjacent connecting line thereof or each convex tooth on the adjacent connecting line. The disclosure also provides a glass substrate and a display device. Performing the disclosure may reduce the resistance of the wiring in the present limited wiring space and improve the charging effect of the glass substrate.

A semiconductor device includes a metal base, a semiconductor chip provided on the metal base, and a frame work located on the metal base and having a metal pattern of an input pattern, an output pattern, and a bias pad. The bias pad and the input pattern or the output pattern are electrically connected by a conductor located on the frame work. The conductor has a characteristic of isolation at a frequency around an input signal or an output signal of the semiconductor device.

Embodiments disclosed herein include an apparatus that comprises a first substrate that comprises a glass layer. In an embodiment, a plurality of vias are provided through a through a thickness of the first substrate. In an embodiment, a second substrate provided over a first surface of the first substrate, and the second substrate comprises an organic dielectric material. In an embodiment, a frame is provided over a second surface of the first substrate, and the frame may comprise a glass layer.