A combination of microvalves and waveguides may enable the creation of reconfigurable on-chip light sources compatible with planar sample preparation and particle sensing architecture using either single-mode or multi-mode interference (MMI) waveguides. A first type of light source is a DFB laser source with lateral gratings created by the light valves. Moreover, feedback for creating a narrowband light source does not have to be a DFB grating in the active region. A DBR configuration (Bragg mirrors on one or both ends of the active region) or simple mirrors at the end of the cavity can also be used. Alternately, ring resonators may be created using a valve coupled to a bus waveguide where the active gain medium is either incorporated in the ring or inside an enclosed fluid. The active light source may be activated by moving a fluid trap and/or a solid-core optical component defining its active region.

A topological laser system is described. The laser system comprises an array of optical elements arranged in an array and coupled between them such that the array is configured for supporting one or more topological modes. The plurality of optical elements comprises optical elements carrying gain material configured for emitting optical radiation in response to pumping energy. The laser system further comprises a pumping unit configured to provide pumping of a group of the optical elements of the array within at least a portion of the spatial region corresponding with said topological mode; and at least one output port optically coupled to one or more of the optical elements associated with said topological mode. The at least one output ports is configured for extracting a portion of light intensity from said laser system.

The present disclosure provides a waveguide integrated optical modulator, which is made of a bismuth film, an antimony film, or a tellurium film. A thickness of the bismuth film, the antimony film, or the tellurium film is between 10 nm and 200 nm, and the bismuth film, the antimony film, or the tellurium film is produced by physical vapor deposition method. The waveguide integrated optical modulator can directly add the symmetrical electrode on the surface of the bismuth film, the antimony film, or the tellurium film, and apply an external bias voltage of different amplitudes to the bismuth film, the antimony film, or the tellurium film by adjusting the power source. Thus, the waveguide integrated optical modulator can actively control the nonlinear optical characteristics of the saturable absorber by changing the magnitude of the external voltage, and further actively modulate the laser characteristics of the pulse.

Chip technology for fabricating ultra-low-noise, high-stability optical devices for use in an optical atomic clock system. The proposed chip technology uses diamond material to form stabilized lasers, frequency references, and passive laser cavity structures. By utilizing the exceptional thermal conductivity of diamond and other optical and dielectric properties, a specific temperature range of operation is proposed that allows significant reduction of the total energy required to generate and maintain an ultra-stable laser. In each configuration, the diamond-based chip is cooled by a cryogenic cooler containing liquid nitrogen.

One illustrative laser disclosed herein includes a gain medium layer having a first width in a transverse direction that is orthogonal to a laser emitting direction of the laser, and an upper light-confining structure positioned above an upper surface of the gain medium layer, wherein the upper light-confining structure has a second width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0. The laser also includes a lower light-confining structure positioned below a lower surface of the gain medium layer, wherein the lower light-confining structure has a third width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0.

A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: $\underset{n=1}{\overset{N_2}{.Math.}}{L}_{2,n}{\mathrm{neff}}_{2,n}-\underset{n=1}{\overset{N_1}{.Math.}}{L}_{1,n}{\mathrm{neff}}_{1,n}=k_f{\lambda }_{\mathrm{Si}}$
where: k.sub.f is a preset integer number higher than or equal to 1, N.sub.1 and N.sub.2 are the numbers of sections in the first and second arms, respectively, L.sub.1,n and L.sub.2,n are the lengths of the nth sections of the first and second arms, respectively, neff.sub.1,n and neff.sub.2,n are the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

A method and apparatus for a silicon photonics chip and a rare-earth-ion-doped waveguide amplifier chip, wherein the rare-earth ion-doped waveguide amplifier is proximate to and optically coupled to the silicon photonics chip.

Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

A waveguide optical gyroscope (WOG) is disclosed, which may include: an emitter; an integrated interferometer disposed on a silica planar lightwave circuit (PLC) and comprising a multilayer waveguide loop disposed in a first cladding material and interposed between layers of at least a second cladding material having an index of refraction lower than an index of refraction of the first cladding material; a pump source configured to pump the first cladding material with a signal that compensates for a propagation loss in the multilayer waveguide loop; and a micro-optic component configured to receive an output of the emitter and to guide the output into the integrated interferometer.

A combination of microvalves and waveguides may enable the creation of reconfigurable on-chip light sources compatible with planar sample preparation and particle sensing architecture using either single-mode or multi-mode interference (MMI) waveguides. A first type of light source is a DFB laser source with lateral gratings created by the light valves. Moreover, feedback for creating a narrowband light source does not have to be a DFB grating in the active region. A DBR configuration (Bragg mirrors on one or both ends of the active region) or simple mirrors at the end of the cavity can also be used. Alternately, ring resonators may be created using a valve coupled to a bus waveguide where the active gain medium is either incorporated in the ring or inside an enclosed fluid. The active light source may be activated by moving a fluid trap and/or a solid-core optical component defining its active region.