Disclosed is a self-locked laser system, including: a semiconductor substrate; a laser diode including a first semiconductor part disposed on the semiconductor substrate, and which generates an optical signal; an unidirectional Whispery Gallery Mode (WGM) resonator including a second semiconductor part disposed on the semiconductor substrate; and a structure emitting an optical signal self-locked by the optical signal of the laser diode, in which the laser diode and the resonator are optically coupled on the semiconductor substrate.

In a Q-switched solid-state laser having a resonator (3, 30) in the form of a linear resonator or a ring resonator having an active laser material (1) and at least one first and one second mirror (4, 5) and a resonator length (a) of less than 50 mm, preferably less than 25 mm, in the case of the configuration as a linear resonator and of less than 100 mm, preferably less than 50 mm, in the case of the configuration as a ring resonator, at least substantially only one longitudinal mode oscillates in the resonator (3). The resonator (3, 30) is in the form of an unstable resonator, with one of the mirrors (4, 5) being a gradient mirror.

Provided is a tunable laser source including a plurality of optical waveguides, at least three optical resonators provided between the plurality of optical waveguides and optically coupled to the plurality of optical waveguides, the at least three optical resonators having different lengths, and at least one optical amplifier provided on at least one of the plurality of optical waveguides, wherein a ratio of a first length of a first optical resonator of the at least three optical resonators to a second length of a second optical resonator of the at least three optical resonators is not an integer.

A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.

A single longitudinal mode ring Raman laser including: a pump source outputting a pump light power, resonantly coupled to a first ring resonator; a optical measurement and piezo-actuator for stabilising the resonant coupling of the pump light power to a first ring resonator; a first ring resonator including a Raman gain medium, wherein the Raman gain medium receives the pump light power and undergoes Raman lasing generating resonated Stokes power at the corresponding Stokes output wavelength; the first ring resonator acting as a feedback loop for the pump light power and the resonated Stokes power and outputting a portion of the Stokes power as the laser output.

A multi-stage thulium-doped (Tm-doped) fiber amplifiers (TDFA) is based on the use of single-clad Tm-doped optical fiber and includes a wavelength conditioning element to compensate for the nonuniform spectral response of the initial stage(s) prior to providing power boosting in the output stage. The wavelength conditioning element, which may comprise a gain shaping filter, exhibits a wavelength-dependent response that flattens the gain profile and output power distribution of the amplified signal prior to reaching the output stage of the multi-stage TDFA. The inclusion of the wavelength conditioning element allows the operating bandwidth of the amplifier to be extended so as to encompass a large portion of the eye-safe 2 μm wavelength region.

A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.

A gain medium is pumped by a source. An optical wave passes through a photonic integrated circuit (PIC) that comprises: a substrate comprising silicon, multiple photonic structures, an input port coupling an optical wave into a waveguide formed in the PIC, and an output port coupling an optical wave out of a waveguide formed in the PIC. Propagation of an optical wave circulating around a closed path of a laser ring cavity is limited using an optical isolator such that, when the pump source exceeds a lasing threshold, the optical wave propagates in a single direction through the gain medium and PIC. From an output coupler, an output is provided that comprises a fraction (e.g., >0.5) of the power of an optical wave that is incident upon the output coupler, and remaining power of the optical wave is redirected around the closed path of the laser ring cavity.

A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length. The thermal load corresponding to the threshold when the pump power is decreased, the ESA thermal load corresponding to the threshold when the pump power is decreased, and the ESA thermal load at the optimal operating point are obtained

An optical resonator device, which can be implemented in a Brillouin laser, comprises a first waveguide ring resonator having a first diameter, and one or more second waveguide ring resonators adjacent to the first waveguide ring resonator. The one or more second waveguide ring resonators each have a second diameter that is less than the first diameter. The one or more second waveguide ring resonators optically communicate with the first waveguide ring resonator, such that an optical signal in the first waveguide ring resonator optically couples into the one or more second waveguide ring resonators. The one or more second waveguide ring resonators is configured such that when the optical signal resonates within the first waveguide ring resonator and the one or more second waveguide ring resonators, the optical signal within the first waveguide ring resonator is suppressed.