Patent classifications
H01S3/0816
SYSTEM AND METHOD FOR LASER SYSTEM HAVING NON-PLANAR THIN DISC GAIN MEDIA
The present disclosure relates to a laser system. The laser system may have at least non-flat gain media disc. At least one pump source may be configured to generate a beam that pumps the non-flat gain media disc. A laser cavity may be formed by the pump source and the non-flat gain media disc. An output coupler may be included for receiving and directing the output beam toward an external component.
CONDENSATION PREVENTION FOR HIGH-POWER LASER SYSTEMS
In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.
Folded slab laser
A folded slab waveguide laser having a hybrid waveguide-unstable resonator cavity. Multiple slab waveguides of thickness t supporting vertical waveguide modes are physically arranged above one another in a stack and optically arranged in series through one or more cavity folding assemblies with curved mirrors. A gain medium such as a gas is arranged in each slab. Each cavity folding assembly is designed to redirect the radiation beam emitted from one slab waveguide into the next waveguide and also at the same time to provide a focus for the radiation beam so that a selected vertical waveguide mode (or modes) is (or are) coupled efficiently into the next slab.
Device and method for measuring thermal load caused by energy transfer upconversion in laser gain crystal
A device and a method for measuring a thermal load caused by energy transfer upconversion in a laser gain crystal. Increasing the pump power multiple times so that the power meter obtains multiple thresholds for a single-frequency laser; obtaining an average pump threshold of the output laser; obtaining cavity parameters of the single-frequency laser; obtaining thermal focal lengths on the tangential and sagittal planes of the laser gain crystal inside the single-frequency laser; obtaining individual ABCD matrices of the laser system on the tangential and the sagittal planes; obtaining a thermal load at the threshold based on the ABCD transfer matrix of the laser gain crystal on the tangential plane, the ABCD transfer matrix of the laser gain crystal on the sagittal plane, and the average pump threshold of the laser system; obtaining a thermal load caused by ETU at threshold based on the thermal load at the threshold.
Light Source Device and Semiconductor Device
Alight source device includes a resonator having first and second mirrors, a gain medium disposed between the first and second mirrors and including a first semiconductor portion, an active layer, and a second semiconductor portion arranged in this order in a direction perpendicular to an optical axis of the resonator, and having first and second principal surfaces respectively located on sides of the first and second semiconductor portions opposite to sides on which the active layer is provided, a first heat dissipation member located on a first principal surface side of the gain medium, and a second heat dissipation member located on a second principal surface side of the gain medium. The resonator and the gain medium are arranged such that the optical axis passes through the gain medium.
Deep ultraviolet laser using strontium tetraborate for frequency conversion
A nonlinear crystal including stacked strontium tetraborate SrB.sub.4O.sub.7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency doubling stage of a laser assembly to generate laser output light having a wavelength in the range of about 180 nm to 200 nm. One or more fundamental laser beams are frequency doubled, down-converted and/or summed using one or more frequency conversion stages to generate an intermediate frequency light with a corresponding wavelength in the range of about 360 nm to 400 nm, and then the final frequency converting stage utilizes the nonlinear crystal to double the frequency of the intermediate frequency light to generate the desired laser output light at high power. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.
POWER-SCALABLE OPTICAL SYSTEM FOR NONLINEAR FREQUENCY CONVERSION
A system for frequency conversion of laser pump radiation includes an optical element for frequency conversion of lasers or laser beams with power scalability. The element has a nonlinear birefringent, thin plate crystal. A pump beam generates frequency-shifted radiation. Phase or quasi-phase matching conditions are in the crystal between beams. Frontside and backside of the crystal have high-reflective and partially-reflective coatings, obtaining intensity enhancement of the pump and frequency-converted radiation, and maintaining relative phase delay between beams, maximizing conversion efficiency. The crystal contacts a heat sink through the high-reflective coating, minimizing temperature inhomogeneity in the crystal. Intrinsic longitudinal heat flow provides power scalability. The element, used intra-cavity, acts as a wavelength-selective component forcing laser operation on resonance of the element, maximizing frequency conversion. The wavelength selectivity allows single-frequency operation of high-power lasers with intra-cavity frequency conversion.
DIVIDED-PULSE LASER REGENERATION AMPLIFICATION APPARATUS AND METHOD
A divided-pulse laser regeneration amplification apparatus includes: a signal light coupling component including a first half-wave plate, a first polarization beam splitter, a first Faraday rotator and a second half-wave plate placed in sequence; and a divided-pulse laser regeneration amplification component including a second polarization beam splitter and a third reflector, the second polarization beam splitter is adjacent to the second half-wave plate and is in a same column as the third reflector and the second half-wave plate; a first quarter-wave plate, a Pockels cell and a first reflector are successively arranged on a first side of the second polarization beam splitter, and a third half-wave plate, a first pulse polarization separation component and a first non-linear pulse amplification component are successively arranged on a second side of the second polarization beam splitter.
GAS LASER AMPLIFIER, GAS LASER APPARATUS, EUV LIGHT GENERATION APPARATUS, AND EUV EXPOSURE APPARATUS
A gas laser amplifier includes a housing, discharge electrode pairs, and an optical resonator. The housing includes an entrance window that allows entry of a first laser beam from outside and an exit window that allows exit of the first laser beam amplified. Each of the discharge electrode pairs excites a laser gas supplied between discharge electrodes facing each other in the housing. The optical resonator causes a second laser beam to oscillate with a gain of the excited laser gas in a non-incident state where the first laser beam from outside the housing does not enter the housing through the entrance window. In an incident state where the first laser beam enters the housing through the entrance window, the optical resonator suspends the oscillation of the second laser beam.
External cavity semiconductor laser
External cavity laser systems are described that can operate with essentially no mode hopping. One example configuration of the laser system includes a semiconductor laser device, a folded cavity external to the semiconductor laser device, where at the semiconductor laser device is positioned at a fold in the folded cavity. In this configuration, at least one mirror is positioned in the folded cavity to enable sustained propagation of light within the folded cavity, and at least two polarization elements are positioned in the folded external cavity. The polarization elements cause a polarization state of the light that impinges in different directions on each semiconductor laser device that is positioned at a fold to be orthogonal to one another, thus eliminating or substantially reducing mode hopping in the laser output.