A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light emitting device includes: a plurality of laser elements, each including a light emitting surface; one or more reflectors; a base including: a bottom portion on which the plurality of laser elements and the one or more reflectors are disposed, and a frame portion surrounding the plurality of laser elements in a top view; a cover attached to a top surface of the frame portion; and a lens array that is bonded to the top surface of the cover and includes: a plate-shaped portion, and a plurality of lens-shaped portions protruding upward from the plate-shaped portion, with the plurality of lens-shaped portions integrated into a one-piece body.

A light emitting device includes: a plurality of laser elements, each including a light emitting surface; one or more reflectors; a base including: a bottom portion on which the plurality of laser elements and the one or more reflectors are disposed, and a frame portion surrounding the plurality of laser elements in a top view; a cover attached to a top surface of the frame portion; and a lens array that is bonded to the top surface of the cover and includes: a plate-shaped portion, and a plurality of lens-shaped portions protruding upward from the plate-shaped portion, with the plurality of lens-shaped portions integrated into a one-piece body.

A disclosed semiconductor laser module includes a semiconductor laser device; a waveguide optical function device that has an incidence end on which laser light emitted from the semiconductor laser device is incident and that guides the incident light; and a protrusion that is provided on an extension line of a light path of the laser light emitted from the semiconductor laser device, the extension line extending beyond the incidence end.

A disclosed semiconductor laser module includes a semiconductor laser device; a waveguide optical function device that has an incidence end on which laser light emitted from the semiconductor laser device is incident and that guides the incident light; and a protrusion that is provided on an extension line of a light path of the laser light emitted from the semiconductor laser device, the extension line extending beyond the incidence end.

A semiconductor laser device includes: a support base having a plurality of mounting surfaces arranged in a first direction, wherein heights of the mounting surfaces from a reference plane that is parallel to the first direction decrease stepwise or gradually along the first direction; a first semiconductor laser element secured to a first mounting surface; a second semiconductor laser element secured to a second mounting surface; a first slow-axis collimator lens secured to the first mounting surface, the first slow-axis collimator lens being located at a position at which the first laser light is incident; a second slow-axis collimator lens directly or indirectly secured to the second mounting surface, the second slow-axis collimator lens being located at a position at which the second laser light is incident; and a first sealing cover that defines an inner space in which the first and second semiconductor laser elements are held.

A semiconductor laser device includes: a support base having a plurality of mounting surfaces arranged in a first direction, wherein heights of the mounting surfaces from a reference plane that is parallel to the first direction decrease stepwise or gradually along the first direction; a first semiconductor laser element secured to a first mounting surface; a second semiconductor laser element secured to a second mounting surface; a first slow-axis collimator lens secured to the first mounting surface, the first slow-axis collimator lens being located at a position at which the first laser light is incident; a second slow-axis collimator lens directly or indirectly secured to the second mounting surface, the second slow-axis collimator lens being located at a position at which the second laser light is incident; and a first sealing cover that defines an inner space in which the first and second semiconductor laser elements are held.

A laser light source includes: a submount having an upper surface; a semiconductor laser element located on the upper surface of the submount and having an end surface from which a laser beam is emitted; a lens facing the end surface of the semiconductor laser element; and a support member located on the upper surface of the submount and supporting the lens. The lens includes a collimating portion configured to collimate the laser beam emitted from the semiconductor laser element. The support member includes: a first portion and a second portion arranged at a lateral side of the submount; and a third portion that connects the first portion and the second portion and overlaps a portion of the semiconductor laser element in a plan view. The lens is supported by the first portion and the second portion via a bonding member.

Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.