A semiconductor laser chip and a preparation method therefor, the method comprising: providing an epitaxial wafer (100), the epitaxial wafer (100) comprising a plurality of resonant cavities (110) arranged in parallel; providing a heat sink substrate (200); attaching the epitaxial wafer (100) to the heat sink substrate (200) so as to form a first chip semi-finished product (10); performing first division on the first chip semi-finished product (10) in the direction perpendicular to the resonant cavities (110) so as to divide the first chip semi-finished product (10) into a plurality of second chip semi-finished products (20); and performing second division on the second chip semi-finished products (20) in the direction parallel to the resonant cavities (110) so as to divide the second chip semi-finished products (20) into a plurality of semiconductor laser chips (30) such that the semiconductor laser chips (30) comprise at least one laser bar.

A laser projection module includes a base, a laser chip, an optical element, and a first conducting wire. The base has an inner cavity and an opening connected to the inner cavity, the laser chip is disposed on a bottom wall that is of the inner cavity and that faces the opening, the optical element is mounted in the opening, a wire layer is disposed on the optical element, and the laser chip, the first conducting wire, and the wire layer are sequentially connected in series.

A laser projection module includes a base, a laser chip, an optical element, and a first conducting wire. The base has an inner cavity and an opening connected to the inner cavity, the laser chip is disposed on a bottom wall that is of the inner cavity and that faces the opening, the optical element is mounted in the opening, a wire layer is disposed on the optical element, and the laser chip, the first conducting wire, and the wire layer are sequentially connected in series.

To provide a laser oscillator, in which an LD module is fixed to a cooling plate through insulated fixation that is superior in durability, cost, and workability in an insulated fixation operation. A laser oscillator includes an LD module. The LD module has one or a plurality of LD light source(s), and is placed on a thermally conductive insulating member placed on a cooling plate. The LD module of the laser oscillator is fixed to the cooling plate, via an elastic insulating member fixed to the cooling plate.

A sheet light source is described that has a width in a front-to-back “x” direction, a length in a left-to-right “y” direction, and a height in a bottom-to-top “z” direction. The sheet light source includes a bottom conductive surface, a laser diode, a transparent conductive sheet, and an adhesive material portion. The laser diode is mounted on the conductive surface in the “z” direction. The transparent conductive sheet is laminated onto the laser diode and the conductive surface in the “z” direction. The adhesive material portion is located between the conductive sheet and the conductive surface, and binds the transparent conductive sheet to the laser diode and the conductive surface. The adhesive material portion further enables photons, emitted substantially in the “x” direction from the laser diode, to propagate therein to an edge and be output.

A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.

The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.

The light emitting device according to an embodiment of the present disclosure includes: a substrate; a semiconductor stacked body; a first electrically conductive layer; a second electrically conductive layer; and a through wiring line. The substrate has a first surface and a second surface that are opposed to each other. The semiconductor stacked body is provided on the first surface of the substrate. The semiconductor stacked body has a plurality of light emitting regions each of which allows a laser beam to be emitted. The first electrically conductive layer is provided on a front surface of the semiconductor stacked body. The front surface is opposite to the substrate. The second electrically conductive layer is provided on the second surface of the substrate. The second electrically conductive layer is provided to allow a predetermined voltage to be applied to the semiconductor stacked body in each of a plurality of the light emitting regions. The through wiring line electrically couples the first electrically conductive layer and the second electrically conductive layer.

A laser projection module, a depth camera and an electronic device are provided. The laser projection module includes a laser emitter configured to emit laser; a reflection element arranged in a laser emission direction of the laser emitter and configured to reflect the laser emitted from the laser emitter; a diffractive optical element arranged in a light exiting direction of the reflection element and configured to diffract the laser reflected by the reflection element; and an optical detector arranged between the laser emitter and the reflection element, and configured to receive the laser and detect an intensity of a non-zero order beam of the laser.