First block (10) is provided with heat dissipator (50). Heat dissipator (50) is provided at an end part of first block (10) on the emission side of the laser light. Heat dissipator (50) extends forward beyond a light emitting surface of semiconductor laser element (40). The surface, of heat dissipator (50), facing the laser light is inclined so as to be more distant from center line L of the laser light toward the forward direction.

A process for creating a stabilized diode laser device is disclosed, where the stabilized diode laser device includes a unibody mounting plate and several chambers aligned along a transmission axis. Various optic components are placed in the chambers, and based on a transmission through the chambers, the optic components are aligned and secured within the chambers.

A process for creating a stabilized diode laser device is disclosed, where the stabilized diode laser device includes a unibody mounting plate and several chambers aligned along a transmission axis. Various optic components are placed in the chambers, and based on a transmission through the chambers, the optic components are aligned and secured within the chambers.

An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

Semiconductor laser device (1) includes lower electrode block (10) that has a first terminal hole and first and second connection holes, upper electrode block (60) that has third connection holes communicating with the respective first connection holes and a second terminal hole, heat sink (110) that has fourth connection holes communicating with the respective second connection holes, and optical component (100) attached to upper electrode block (60). The first and the second connection holes are formed on both side of a recess that is formed to house a submount on which a semiconductor laser element is disposed. Lower electrode block (10) is disposed on heat sink (110). Lower electrode block (10) and upper electrode block (60) are fastened together with first fasteners (90, 90), whereas lower electrode block (10) and heat sink (110) are fastened together with second fasteners (91, 91).

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

A diode laser arrangement has a diode laser device and at least one cooling device. The at least one cooling device is arranged on the diode laser device. The at least one cooling device is configured to cool the diode laser device. The at least one cooling device has a contact body and at least one heat conducting insert. The contact body contains a first material or consisting of a first material, and the at least one heat conducting insert has a second material, which is different from the first material, or consisting of a second material, which is different from the first material, and the contact body is arranged on the diode laser device. The at least one heat conducting insert is embedded in the contact body.

Systems and techniques associated light detection and ranging (LIDAR) applications are described. In one representative aspect, techniques can be used to implement a packaged semi-conductive apparatus is disclosed. The apparatus includes a substrate; a diode die carried by the substrate and positioned to emit an electromagnetic energy beam; and a shell coupled to the substrate to enclose the diode die. The shell includes an opening or a transparent area to allow the electromagnetic energy beam emitted from the diode die to pass through the shell.

An optoelectronic component is provided that includes a radiation-emitting semiconductor chip, which emits electromagnetic radiation from a radiation exit surface during operation, a carrier comprising at least two first contact points, and a cover comprising at least two second contact points (4c), wherein the at least two first contact points and the at least two second contact points are electrically conductively and/or thermally conductively connected to one another by a first plurality of nanowires and a second plurality (6b) of nanowires, and the nanowires provide a mechanically stable connection between the carrier and the cover. In addition, a method for producing an optoelectronic component is given.