A tunable laser for a transceiver includes a silicon photonics substrate, first and second patterned regions each being defined in the substrate a step lower than a flat surface region of the substrate, first and second laser diode chips arranged in the first and second patterned regions, the patterned regions being configured to align the gain regions of the first and second laser diode chips with integrated couplers formed in the substrate adjacent to the first and second patterned regions to facilitate flip-bonding the first and second laser diode chips within the patterned regions, and a tuning filter coupled to the first laser diode chip and the second laser diode chip via the integrated couplers. The tuning filter is configured to receive laser light from each of the first and second laser diode chips and generate a laser output having a gain determined by each of the gain regions.

A semiconductor laser element includes a semiconductor-containing part, an electrode and at least one metal film. The semiconductor-containing part has first and second main surfaces, a light emitting end surface, a light reflecting end surface, and an optical waveguide. A distance between the first main surface and the optical waveguide is greater than a distance between the second main surface and the optical waveguide. The electrode is provided on the first main surface. The metal film is provided on the first main surface at a position spaced apart from the electrode. The metal film is in contact with a first side of an outer edge of the first main surface on a side of the light emitting end surface. The metal film is arranged at a position that does not overlap the optical waveguide in a plan view seen along a normal direction of the first main surface.

The invention relates to a laser chip located between a first and a second electrically and thermally conductive component, wherein: a first lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the first component; the second lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the second component; the laser chip has a radiation side which is located between the components; the radiation side is arranged set back inwardly at a predefined distance from the first end faces of the components; and a radiation space, which extends from the radiation side of the laser chip to the first end faces of the components is formed between the first lateral surfaces of the two components and adjacent to the radiation side of the laser chip.

The invention relates to a laser chip located between a first and a second electrically and thermally conductive component, wherein: a first lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the first component; the second lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the second component; the laser chip has a radiation side which is located between the components; the radiation side is arranged set back inwardly at a predefined distance from the first end faces of the components; and a radiation space, which extends from the radiation side of the laser chip to the first end faces of the components is formed between the first lateral surfaces of the two components and adjacent to the radiation side of the laser chip.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

The disclosure describes techniques for forming an ohmic contact layer in a wafer containing CMOS devices and attaching a VCSEL die therein. A composite layer that forms the ohmic contact layer is selected based on the epitaxially-grown compound semiconductor material of the VCSEL die. The ohmic contact layer may not comprise gold, as gold introduces contamination in the rest of the CMOS process. The wafer may have an allocated area for accepting the VCSEL die. The allocated area may have a recess to facilitate placement of the VCSEL die.

A surface emitting laser includes a substrate, semiconductor layers on the substrate, a light transmitting window configured to transmit laser light from the semiconductor layers, a first electrode pad, a second electrode pad, a first dummy pad, and a second dummy pad, wherein the first electrode pad, the second electrode pad, the first dummy pad, and the second dummy pad are disposed on the semiconductor layers at a place different from the light transmitting window, and wherein the substrate is classified into first through fourth regions by a straight line extending in a first direction and a straight line extending in a second direction perpendicular to the first direction, the first electrode pad being situated in the first region, the second electrode pad being situated in the second region, the first dummy pad being situated in the third region, and the second dummy pad being situated in the fourth region.

A vertical cavity surface-emitting laser includes a light emitting portion provided on a substrate, a first pad provided on the substrate, the first pad being electrically connected to the light emitting portion, and a second pad provided on the substrate, the second pad being electrically isolated from the light emitting portion and the first pad.

What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.

A substrate for mounting a light-emitting element includes a substrate with a plate shape and a base that protrudes from a front surface of the substrate, wherein the base has a mounting part for mounting a light-emitting element on a top surface thereof and composes a sloping surface that slopes with respect to the front surface and the substrate and the base are integrally formed of a ceramic.