The embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively. In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.

A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.

A light emitter includes a substrate, a first mirror layer provided on the substrate, a columnar section including an active layer provided on a side of the first mirror layer that is the side opposite the substrate and a second mirror layer provided on a side of the active layer that is the side opposite the first mirror layer, a semi-insulating member provided on the side surface of the columnar section and having thermal conductivity higher than the thermal conductivity of the first mirror layer and the thermal conductivity of the second mirror layer, and a sub-mount which has a first surface bonded to the semi-insulating member and through which light produced in the active layer passes, and a second surface of the sub-mount that is the surface opposite the first surface is oriented in the direction in which the light produced in the active layer exits.

An optoelectronic device employs a surface-trapped TM-polarized optical mode existing at a boundary between a distributed Bragg reflector (DBR) and a homogeneous medium, dielectric or air. The device contains a resonant optical cavity surrounded by two DBRs, and an additional DBR section on top supporting the surface-trapped mode. Selective chemical transformation, like selective oxidation, etching or alloy composition intermixing form a central core and a periphery having different vertical profiles of the refractive index. Therefore, the longitudinal VCSEL mode in the core is non-orthogonal to the surface-trapped mode in the periphery, and the two modes can be transformed into each other. Such transformation allows fabrication of a number of optoelectronic devices and systems like a single transverse mode VCSEL, an integrated optical circuit operating as an optical amplifier, an integrated optical circuit combining a VCSEL and a resonant cavity photodetector, etc.

A surface emitting laser includes a substrate, a stacked structure provided on the substrate and including a resonator and a first distortion applier connected to the resonator and applying distortion to the active layer, and a second distortion applier provided on the substrate and applying distortion to the active layer. As seen from a stacking direction, the first distortion applier has a first portion and a second portion provided with the resonator in between, as seen from the stacking direction, a longitudinal direction of the second distortion applier and a longitudinal direction of the first distortion applier are the same direction, and a magnitude relationship of a linear expansion coefficient of the second distortion applier to a linear expansion coefficient of the substrate is the same as a magnitude relationship of a linear expansion coefficient of the first distortion applier to the linear expansion coefficient of the substrate.

A vertical cavity surface emitting laser device includes a substrate, a first-type doped distributed Bragg reflector (DBR) disposed on the substrate, a first electrode disposed on the substrate, an active layer disposed on the first-type doped DBR, a second-type DBR disposed on the active layer, and a second electrode disposed on the second-type DBR. The second-type DBR defines a first doping concentration region, and a second doping concentration region disposed between the first doping concentration region and the active layer and that has a doping concentration less than that of the first doping concentration region. The second-type doped DBR has a confinement member formed in the first doping concentration region, and defining an aperture.

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

A surface-emitting laser includes a substrate having a principal surface; an active layer provided on the principal surface of the substrate; a first stacked layer provided on the active layer, the first stacked layer serving as a first distributed Bragg reflector; a first contact layer disposed between the active layer and the first stacked layer; a post provided on the principal surface of the substrate, the post including the active layer, the first contact layer, and the first stacked layer, the post having an upper surface, a side surface inclined relative to the substrate principle surface, and a lower end; and a first electrode that contacts the first contact layer at the side surface of the post.

A vertical cavity surface emitting laser includes a base and a layered element provided on the base. The layered element includes a first mirror layer, a second mirror layer, and an active layer provided between the first mirror layer and the second mirror layer. The layered element further includes a light exiting section via which light produced in the active layer exits. The light exiting section is an outermost surface of an AlGaInP layer or an AlGaAsP layer.

A surface-emitting semiconductor laser has a semiconductor structure that includes a first side, a second side opposite to the first side, and a side surface that extends from the second side to the first side; a first electrode provided on the first side of the semiconductor structure; and a second electrode provided on the first side of the semiconductor structure. The semiconductor structure also includes a substrate, a first stacked semiconductor layer disposed on the substrate, an active layer disposed on the first stacked semiconductor layer, and a second stacked semiconductor layer disposed on the active layer. The first stacked semiconductor layer includes a first distributed Bragg reflector, and the second stacked semiconductor layer includes a second distributed Bragg reflector. The semiconductor structure side surface has at least an upper surface that is free of chipping.