A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, the laminated body includes a first portion having a first width, a second portion having a second width, and a third portion which is provided between the first portion and the second portion and has a third width wider than the first width or the second width, and a resin layer which covers at least one portion of the first portion is provided.

A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.

A method of fabricating a semiconductor optical device includes the steps of preparing a substrate product including a first side and a second side opposite to the first side, the first side including device sections and a street region extending between the device sections; forming a mask on the first side, the mask including device covering portions covering the respective device sections and an opening defining the device covering portions, the opening being provided in the street region; etching the substrate product using the mask so as to form a groove in the street region, the groove defining the device sections; after removing the mask, securing the first side to a support member; and forming an array of semiconductor chips on the support member by removing part of the substrate product from the second side until the groove is exposed so as to separate the device sections from each other.

Optical beam quality of an optoelectronic device is improved by suppression of high-order transverse optical modes by their resonant interaction with the continuum of modes in the surrounding regions, such continuum being realized by replacement of one or several layers by layers having a lower refractive index. In particular, selective oxidation of GaAlAs-based vertical cavity surface emitting laser results in (Ga)AlO layers surrounding the aperture and having a lower refractive index than the original (Ga)AlAs layers. The continuum of optical modes originates due to the modification of the optical field in the areas surrounding the aperture caused by the low index insertions positioned to result in enhancement of the optical field in their vicinity. High-order lateral optical modes in the aperture region exhibit larger leakage losses than the fundamental lateral optical mode due to the resonant interaction with the continuum of modes outside the aperture, enabling single-mode lasing from a broad aperture vertical cavity surface emitting laser.

A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.

An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.

A surface emitting laser includes a substrate, a stacked structure provided on the substrate and including a resonator and a first distortion applier connected to the resonator and applying distortion to the active layer, and a second distortion applier provided on the substrate and applying distortion to the active layer. As seen from a stacking direction, the first distortion applier has a first portion and a second portion provided with the resonator in between, as seen from the stacking direction, a longitudinal direction of the second distortion applier and a longitudinal direction of the first distortion applier are the same direction, and a magnitude relationship of a linear expansion coefficient of the second distortion applier to a linear expansion coefficient of the substrate is the same as a magnitude relationship of a linear expansion coefficient of the first distortion applier to the linear expansion coefficient of the substrate.

A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die.

A vertical cavity surface emitting laser includes: a substrate; a laminated body which is provided over the substrate; and a resin layer which is provided on at least a side surface of the laminated body, wherein the laminated body at least includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, a length of the laminated body in a first direction is greater than a length of the laminated body in a second direction orthogonal to the first direction, and in the plan view, a length of the resin layer in the first direction is greater than a length of the resin layer in the second direction.

A vertical cavity surface emitting laser includes: a laminated body; an insulation layer which is provided over at least a portion of the laminated body; an electrode of which at least a portion is provided over the laminated body; a pad; and a wiring which connects the electrode and the pad, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion, in a plan view, the electrode is provided so as to cover at least a portion of the resonance portion, in the plan view, a width of the wiring is greater than a width of the first distortion imparting portion and is smaller than a width of the electrode.