A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die.

A VCSEL for emitting laser light includes a main element which has a mesa portion. The mesa portion includes a stack of different layers stacked in a stacking direction. An emission region is formed on a top surface of the mesa portion. Laser light generated in an active layer in the stack emerges from the emission region. Electrical contacts for feeding electrical energy into the active layer are provided on the main element. At least one side portion of an electrical contact of the electrical contacts is arranged on a side surface of the main element. The side surface is oriented transversely with respect to the layers.

In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate, a first mirror on the substrate, an active region on the first mirror, and a second mirror on the active region. The second mirror may include a plurality of reflector layers. A mesa may be defined in the second mirror. The mesa may taper out from a top surface of the mesa to a periphery of the mesa. A quantity of reflector layers, of the plurality of reflector layers, in sections of the mesa may decrease from a central section of the mesa, underneath the top surface, to the periphery of the mesa.

The invention related to an optoelectronic device (10) comprising a semiconductor layer stack (109), in which a surface-emitting laser diode is formed. The semiconductor layer stack (109) comprises a first aperture stop (115). A dimension of the first aperture stop (115) in a first horizontal direction is smaller than 50 m and smaller than the dimension of the first aperture stop (115) in a second horizontal direction.

A vertical-emitting semiconductor laser component includes a semiconductor material having an optical axis, a mesa for emitting light in a light emission direction, and a contact for electrically contacting the mesa. The contact has a contact opening arranged along a first direction. The optical axis is arranged along the first direction.

A method of forming an optical aperture of a vertical cavity surface emitting laser includes the steps of providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer comprising a semiconductor material suitable to be oxidized and oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer. The method also includes removing at least a part of the oxidized outer region so as to form a gap where the oxidized outer region or the part of the oxidized outer region has been removed, depositing an electrically non-conducting material on walls of the gap with a thickness smaller than a thickness of the gap, and filling a remaining void of the gap with a further material.

A phosphor element includes an incident face for an excitation light, an emitting face opposing the incident face and a side face, and the element converts at least a part of the incident excitation light incident onto the incident face to fluorescence and emits the fluorescence from the emitting face. The emitting face has an area larger than an area of the incident face. The phosphor element comprises an inclination region in which an inclination angle of the side face with respect to a vertical axis perpendicular to the emitting face is monotonously increased from the incident face toward the emitting face, viewed in a cross-section perpendicular to the emitting face and along the longest dividing line halving the emitting face.

A vertical cavity surface emitting laser element includes first and second light reflecting layers, first, second and third semiconductor layer portions, an active layer, and first and second electrodes. The first semiconductor layer portion is disposed on the first light reflecting layer and contains a first impurity of a first conductivity type. The second semiconductor layer portion contains a second impurity of a second conductivity type. The third semiconductor layer portion is disposed on the second semiconductor layer portion, contains a third impurity of the first conductivity type at a higher concentration than a concentration of the first impurity, and has a thickness of 10 nm or more and less than 100 nm. The second light reflecting layer is disposed on the third semiconductor layer portion. The first electrode is electrically connected to the first semiconductor layer portion. The second electrode is in contact with the third semiconductor layer portion.

A Provided is a light-emitting element array that includes a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.

The aspects of the disclosed embodiments relates to an optoelectronic device including a substrate layer having a first surface plane and a second surface plane opposite and parallel to the first surface plane. The device also includes a mesa structure arranged on the first surface plane of the substrate layer. The mesa structure includes at least one layer of material; and a first surface arranged at an angle with respect to the first surface plane of the substrate layer, wherein the angle is different from 0 and 180. The device still further includes a first terminating oxide layer of a first type arranged on the first surface of the mesa structure and the first surface of the mesa structure has been cleaned by removing at least 75% of native oxides on the first surface of the mesa structure before arranging the first terminating oxide layer of a first type thereon.