Mapping apparatus includes a transmitter, which emits a beam comprising pulses of light, and a scanner, which is configured to scan the beam, within a predefined scan range, over a scene. A receiver receives the light reflected from the scene and to generate an output indicative of a time of flight of the pulses to and from points in the scene. A processor is coupled to control the scanner so as to cause the beam to scan over a selected window within the scan range and to process the output of the receiver so as to generate a 3D map of a part of the scene that is within the selected window.

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Methods for fabricating a vertical cavity surface emitting laser (VCSEL) using epitaxial lateral overgrowth (ELO). The ELO layers comprise island-like III-nitride semiconductor layers grown on a substrate using a growth restrict mask, wherein the island-like III-nitride semiconductor layers comprise a light emitting resonant cavity. An aperture for the resonant cavity is fabricated on a wing of the ELO layers with distributed Bragg reflector (DBR) mirrors formed on bottom and top regions of the wing of the ELO layers.

An (SOA) system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process, the VCSEL having an HCG grading. At least one of an ASIC and driver controller coupled to the VCSEL laser, the ASIC monitoring an output of a light pulse over wavelength.

Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

An optical subsystem with flat lenses for multimode transceivers is provided. The optical subsystem includes a photonic integrated circuit (PIC). The optical subsystem also includes a vertical cavity surface emitting laser (VCSEL) disposed on the PIC, a photodetector disposed on the PIC, a transmit multimode fiber (TX-MMF) disposed on the PIC, and a receiver multimode fiber (RX-MMF) disposed on the PIC. The PIC includes a substrate, an oxide layer disposed above the substrate, and a plurality of metalenses disposed in the oxide layer. The substrate includes a polymer region and a mirror disposed at a base of the polymer region.

An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.

The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region (3) embedded between two layer sequences (1, 2) and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences (1, 2). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules.

A laser device is disclosed. The laser device includes a surface-emitting laser including a plurality of emission points, a lens array including a plurality of lenses arranged so as to correspond to a position of the surface-emitting laser; and a light condensing optical system that condenses a plurality of light fluxes emitted through the lens array and enters the condensed lights to an input end of an optical fiber. The light condensing optical system includes an aspheric lens having positive refractive power. Both of an incidence surface and an emission surface of the aspheric lens have aspheric shapes.

An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.