Disclosed herein are various embodiments for high performance wireless data transfers. In an example embodiment, laser chips are used to support the data transfers using laser signals that encode the data to be transferred. The laser chip can be configured to (1) receive a digital signal and (2) responsive to the received digital signal, generate and emit a variable laser signal, wherein the laser chip comprises a laser-emitting epitaxial structure, wherein the laser-emitting epitaxial structure comprises a plurality of laser-emitting regions within a single mesa structure that generate the variable laser signal. Also disclosed are a number of embodiments for a photonics receiver that can receive and digitize the laser signals produced by the laser chips. Such technology can be used to wireless transfer large data sets such as lidar point clouds at high data rates.

The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface that is anisotropic, wherein the ROC comprises four directions, the four directions being +x, +y, −x, −y, the ROC in at least one direction is in a range greater than a cavity length of the VCSEL and less than a predefined ROC value for a standard beam width (ROCUL), and the ROC in at least one of the other directions is outside the range.

A semiconductor laser element includes: a resonator structure including a stacked structure in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layer are stacked; and a first light reflective layer and a second light reflective layer which are provided at both ends along a resonance direction of the resonator structure. When an oscillation wavelength is set to λ, each of the first light reflective layer and the second light reflective layer includes a refractive index periodic structure including, in a stacked manner, a plurality of thin films each having an optical film thickness of k0 (λ/4). A phase shift layer is provided inside at least one light reflective layer of the first light reflective layer or the second light reflective layer.

In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.

A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

A segmented VCSEL array having a plurality of individually addressable segments, each segment comprising one or more VCSELs. In some cases, at least two of the plurality of individually addressable segments may be driven in combination. The plurality of individually addressable segments, in some embodiments, may be centered around the same central point. An optical element may be used in conjunction with the segmented VCSEL array, and in some cases may be aligned to the central point. The optical element may be configured such that light passing therethrough may be directed according to which of the plurality of individually addressable segments is activated. In some embodiments, the optical element is a grating or diffractive optical element. The grating or diffractive optical element could be patterned with optical segments that each correspond to at least one the plurality of individually addressable segments.

An example device may include a light source, an optical element, and, optionally, an encapsulant layer. A light beam generated by the light source may be received by the optical element and redirected towards an illumination target, such as an eye of a user. The optical element may include a material, for example, with a refractive index of at least approximately 2 at a wavelength of the light beam. The light source may be a semiconductor light source, such as a light-emitting diode or a laser. The optical element may be supported by an emissive surface of the light source. Refraction at an exit surface of the optical element, and/or within a metamaterial layer, may advantageously modify the beam properties, for example, in relation to illuminating a target. In some examples, the light source and optical element may be integrated into a monolithic light source module.

An optical package may include a fan-out-wafer-level-packaging (FOWLP) sub-package including a redistribution layer (RDL) on a molded component including an electrical chip. The optical package may include an optical chip over the FOWLP sub-package. The optical chip may be electrically connected to the RDL. An area of a surface of the RDL may be larger than an area of a surface of the optical chip. The optical package may include a package housing over the optical chip such that light to be received or transmitted by the optical chip may is to pass through the package housing.

A moisture-resistant optical device comprises a microlens array (MLA) formed from a first material defining a plurality of associated recesses; and a moisture-resisting layer of a second material, formed on the MLA and filling the associated recesses. An associated method of manufacture is also disclosed.