An embodiment includes a light source. The light source may include a substrate and a diffuser. The substrate may include a first surface and a second surface. The second surface may be opposite the first surface. The diffuser may be carried by the substrate. The diffuser may be configured to receive an optical signal from the substrate after the optical signal propagates through the substrate and to control a particular profile of a resultant beam of the optical signal over two axes after the optical signal propagates through the integrated diffuser.

A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.

A vertical-cavity surface-emitting laser (VCSEL) includes a first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted by the VCSEL through the substrate. The VCSEL lases in a single transverse mode.

Modification of the topology of selected regions of individual VCSEL devices during fabrication is utilized to provide an array output beam with specific characteristics (e.g., uniform output power across the array). These physical features include at least the width of the metal aperture, the width of the oxide aperture, and/or the geometry of the contact ring structure on the top of the VCSEL device. The modifications may also function to adjust the numerical apertures (NAs) of the devices, the beam waist, wallplug efficiency, and the like.

A method of fabrication of a micro-optics device included providing a layer of material; patterning the layer of material by one or more of: locally unzipping and desorbing molecules thereof, with a nano-scale dimensioned probe, to obtain a curved surface for the layer of material, the curved surface having a curved profile in a plane section; and completing a layer structure perpendicular to the plane section by providing one or more additional layers of material in contact with the curved surface to obtain the micro-optics device, wherein the micro-optics device has the layer structure, with a given layer thereof comprising a defect delimited by two surfaces, wherein one of the two surfaces is the curved surface.

A high contrast grating optoelectronic apparatus includes an optoelectronic device at a front surface of a substrate. The optoelectronic device is to one or both of emit light and detect light through a back surface of the substrate opposite the front surface. A high contrast grating (HCG) lens is adjacent to and spaced apart from the back surface of the substrate by a spacer. The spacer includes one or both of a wafer-bonded substrate and a cavity. The HCG lens is to focus the light.

A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

A vertical cavity surface emitting laser (VCSEL) and a method for fabricating the same are provided. The VCSEL includes an epitaxial laminate, a lower electrode layer, an upper electrode layer and a current spreading layer. The epitaxial laminate at least includes a first reflector, a second reflector, and an active layer disposed therebetween for generating an initial laser beam. The upper and lower electrode layers jointly define a current path passing through the active layer, and the upper electrode layer has an aperture for defining a light-emitting region. The current spreading layer disposed on the second reflector and electrically connected to the upper electrode layer includes a plurality of beam splitting structures positioned at a light emergent side thereof, and the beam splitting structures is located in the aperture so that the initial laser beam is divided into a plurality of sub-beams.

A semiconductor vertical resonant cavity light source includes an upper and lower mirror that define a vertical resonant cavity. An active region is within the cavity for light generation between the upper and lower mirror. At least one cavity spacer region is between the active region and the upper mirror or lower mirror. The cavity includes an inner mode confinement region and an outer current blocking region. An index guide in the inner mode confinement region is between the cavity spacer region and the upper or lower mirror. The index guide and outer current blocking region each include a lower and upper epitaxial material layer thereon with an epitaxial interface region in between. At least a top surface of the lower material layer includes aluminum in the interface region throughout a full area of an active part of the vertical light source.