The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.

A laser arrangement includes a laser array including a plurality of Vertical Cavity Surface Emitting lasers and an optical structure including a diffuser arranged to change a distribution of the laser light. The optical structure is configured to transform the laser light to transformed laser light such that an overlap of the emission cones of at least a group of the plurality of lasers is increased in field-of-view in comparison to perfectly collimated laser light diffused to a flat-top intensity profile in the field-of-view. The optical structure is arranged to redirect the laser light emitted at angles of the emission cone to the field-of-view so as to increase the overlap of the emitted laser light in the field-of-view. The optical structure is also configured to provide a slope angle ? of an intensity profile along a direction of the field-of-view that is smaller than a divergence angle of the laser.

A light emitting element includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 made of GaN-based compound semiconductors are stacked, a mode loss acting portion 54 provided on the second compound semiconductor layer 22 and configuring a mode loss acting region 55 that acts upon increase or decrease of oscillation mode loss, a second electrode 32, a second light reflection layer 42, a first light reflection layer 41, and a first electrode 31. A current injection region 51, a current non-injection inner side region 52 that surrounds the current injection region 51 and a current non-injection outer side region 53 that surrounds the current non-injection inner side region 52 are formed on the stacked structure 20, and a projection image of the mode loss acting region 55 and a projection image of the current non-injection outer side region 53 overlap with each other.

A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

A semiconductor vertical resonant cavity light source includes an upper and lower mirror that define a vertical resonant cavity. An active region is within the cavity for light generation between the upper and lower mirror. At least one cavity spacer region is between the active region and the upper mirror or lower mirror. The cavity includes an inner mode confinement region and an outer current blocking region. An index guide in the inner mode confinement region is between the cavity spacer region and the upper or lower mirror. The index guide and outer current blocking region each include a lower and upper epitaxial material layer thereon with an epitaxial interface region in between. At least a top surface of the lower material layer includes aluminum in the interface region throughout a full area of an active part of the vertical light source.

The invention describes a laser device (100) comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel. The laser device (100) is adapted such that degradation of at least one mesa (120) results in a decreased laser power emitted by the laser device (100) in a defined solid angle when driven at the defined electrical input power. The laser device (100) is adapted such that eye safety of the laser device (100) is guaranteed during life time of the laser device (100). Eye safety may be guaranteed by designing the semiconductor structure or more general layer structure of mesas (120) of the laser device (100) in a way that degradation of one or more layers of the layer structure results in a reduction of the maximum optical power emitted in a defined solid angle. Alternatively or in addition, the electrical input power supplied to the laser device (100) may be controlled and adapted depending on the emitted optical power such that safety limits are not exceeded. The invention further relates to a laser module and an optical sensor (300) comprising such a laser device (100) and mobile communication device (400) comprising such an optical sensor (300). The invention further relates to a method of manufacturing such a laser device (100).

A vertical-cavity surface-emitting laser (VCSEL) includes a first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted by the VCSEL through the substrate. The VCSEL lases in a single transverse mode.

A light emitting element includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 made of GaN-based compound semiconductors are stacked, a mode loss acting portion 54 provided on the second compound semiconductor layer 22 and configuring a mode loss acting region 55 that acts upon increase or decrease of oscillation mode loss, a second electrode 32, a second light reflection layer 42, a first light reflection layer 41, and a first electrode 31. A current injection region 51, a current non-injection inner side region 52 that surrounds the current injection region 51 and a current non-injection outer side region 53 that surrounds the current non-injection inner side region 52 are formed on the stacked structure 20, and a projection image of the mode loss acting region 55 and a projection image of the current non-injection outer side region 53 overlap with each other.

Disclosed herein are various embodiments for laser arrays that include graphene lens structures located on laser-emitting semiconductor structures. In an example embodiment, an apparatus comprising (1) a laser-emitting epitaxial structure having a front and a back, wherein the laser-emitting epitaxial structure is back-emitting, and (2) a graphene lens structure located on the back of the laser-emitting epitaxial structure. Photolithography processes can be used to deploy the graphene lens structures on the laser structures.

A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.