A light-emitting device includes a light-emitting unit. The light-emitting unit includes an array of multiple light-emitting element groups, each including multiple light-emitting elements. In the light-emitting unit, the multiple light-emitting element groups are sequentially driven along the array such that, for each of the multiple light-emitting element groups, the multiple light-emitting elements included in the light-emitting element group are concurrently set to a state of emitting light or a state of not emitting light.

A measurement method of a surface-emitting laser includes a step of causing a surface-emitting laser to emit light and a step of positioning an optical axis of an optical system on each of a plurality of positions of the surface-emitting laser and measuring a spectrum at each of the plurality of positions.

A surface emitting laser has a Vertical-Cavity Surface emitting laser (VCSEL) structure. The VCSEL structure includes an aperture provided by a current confinement structure. An optically discontinuous portion is formed in a top Distributed Bragg Reflector (DBR) of the VCSEL structure such that it is arranged in a region with a gap between it and the aperture.

A VCSEL device having non-coaxial-with-one-another apertures and/or rotationally asymmetric apertures formed in layer(s) of the VCSEL structure to define more than one spatial mode in a light output in operation of the device. An array of such VCSEL devices configured to have different spatial modes at the output of different constituent VCSEL devices. Spatial asymmetry of structure of the constituent VCSEL devices and, therefore, arrays of VCSEL devices causes the overall light output to form an irregular grid of output spots of light. When the VCSEL array is equipped with an appropriate lens array, the spatial components of the light output of the VCSEL array are caused to overlap in the far at the imaging plane in a multiple spatial (and spectral) mode fashion, thereby reducing speckle in imaging applications.

A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.

The present disclosure describes various linear VCSEL arrays, as well as VCSEL array chips incorporating such linear VCSEL arrays, and modules, host devices and other apparatus into which one or more of the linear VCSEL arrays are integrated. Implementations can include, for example, varying the aperture size of the VCSELs, tapering the shape of the transmission line, and/or changing the density of the VCSELs.

Changing non-mechanically a direction of irradiating a laser. The laser apparatus includes an optical device and a laser irradiation device. The optical device has two reflection mirrors facing each other, and a waveguide between the two reflection mirrors. The laser irradiation device irradiates the optical device with laser. The optical device is configured so that at least a portion of the laser travels on the waveguide by being reflected by the two reflection mirrors in order. The optical device has an output surface that emits a portion of the laser. The laser irradiation device has a plurality of irradiation parts including a first irradiation part that irradiates a first laser and a second irradiation part that irradiates a second laser. When viewed from a normal direction of the output surface, a traveling direction of the first laser is not parallel to a traveling direction of the second laser.

An optoelectronic device includes a semiconductor substrate and an array of emitters disposed on the substrate, including at least first emitters disposed in a central zone of the array and second emitters disposed in at least one peripheral zone of the array, surrounding the central zone. The array includes at least one cathode and at least one anode disposed on opposing sides of the emitters. The first emitters have a first resistance between the at least one cathode and the at least one anode, and the second emitters have a second resistance, greater than the first resistance, between the at least one cathode and the at least one anode. A drive circuit is coupled to apply a selected voltage between the at least one cathode and the at least one anode so as to cause the emitters to emit optical radiation.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.