A light-emitting component includes: a substrate; multiple light-emitting elements provided on the substrate, each having a light-emitting area; and multiple thyristors which are provided on each of the light-emitting elements, which include gate layers, and which cause light to be emitted, or increase an amount of light emitted, from the light-emitting areas of the light-emitting elements by being in an ON state. The substrate absorbs light emitted from the thyristors and emits light not absorbed by the gate layers.

In an example, the present invention provides a small form factor package comprising RGB laser diode devices configured with short cavity lengths. In an example, the present laser module includes at least a first red laser diode device, at least a second green laser diode device, and at least a third red laser diode device. At least one of the laser diode devices has a cavity length of less than 200 um, or less than 150 um, or less than 100 um. The optical output beams of the red, green, and blue laser diodes are combined into a single beam or colinear beams using optical techniques. The laser diode devices and the optical combining optics contained in a sealed package device. The sealed package device has a small form factor volume.

A semiconductor laser device is provided with a semiconductor layer including an active layer and a plurality of cladding layers sandwiching the active layer. The active layer includes a stripe-shaped active region, a pair of first refractive index regions and a pair of second refractive index regions sandwiching the active layer and the pair of first refractive index regions. When ? is the laser oscillation wavelength, n.sub.a is the effective refractive index of the active region, n.sub.c is the effective refractive index of the first refractive index regions, n.sub.t is the effective refractive index of the second refractive index regions, w is the width of the active region, and m is a positive integer, the semiconductor laser device satisfies n.sub.a>n.sub.t>n.sub.c, and the conditions of equations (5), (8) and (9).

A light emitting element array includes: a light emitting element group that includes plural light emitting elements; and plural lenses that are provided, corresponding to the plural light emitting elements, on a light emitting surface side of the plural light emitting elements, and that deflects light emitted from the plural light emitting elements according to a positional relation with the plural light emitting elements. Distances between central axes of light emission of the plural light emitting elements and central axes of the plural lenses corresponding to the plural light emitting elements increase from a center side of the light emitting element group toward an end side of the light emitting element group, and a degree of change in the distances decreases from the center side of the light emitting element group toward the end side of the light emitting element group.

A VCSEL is described that provides for emission from the substrate side. The VCSEL comprises a substrate having first and second major surfaces, a first distributed Bragg reflector (DBR) on the first major surface of the substrate, an active region on the first DBR, and a second DBR on the active region. These elements are aligned on a longitudinal axis along which laser radiation is emitted. In an illustrative embodiment of the invention, an open region extends through the substrate along the longitudinal axis between the second major surface of the substrate and the first DBR. An anti-reflection coating and a first ohmic contact are located on the first DBR in this region. Preferably the first ohmic contact extends around all or part of the anti-reflection coating. A second ohmic contact is located on the surface of the second DBR. The two DBRs form a laser cavity; and emission takes place along the longitudinal axis through the anti-reflection coating. A method for forming the VCSEL is also described.

A laser diode of the VC SEL type includes, superimposed on top of a substrate, a bottom Bragg mirror, a region of one or more quantum wells, and a top Bragg mirror. A section of the bottom Bragg mirror has an area that is less than that of a section of the top Bragg mirror, the sections being defined in planes parallel to the plane of the substrate. The laser diode further includes a peripheral region, constituted by a confinement material, situated between the substrate and the top Bragg mirror, and surrounding at least the bottom Bragg mirror. The laser diode is devoid of any laterally-oxidized layer. Thanks to the specific geometrical configuration of the laser diode, the charge carriers are confined, during operation, to the center of the laser diode.

A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

An optical device includes a first array of emitters disposed on a substrate and configured to emit respective beams of optical radiation in a direction perpendicular to the substrate. A second array of microlenses is positioned on the substrate in alignment with the respective beams of the emitters, having respective sag profiles that vary over an area of the substrate. The second array includes at least first microlenses in a central region of the substrate and second microlenses in a peripheral region of the substrate, such that the first microlenses have respective first focal powers, while the second microlenses have respective second focal powers, which are less than the first focal powers.

In an embodiment, the gain-guided semiconductor laser includes a semiconductor layer sequence and electrical contact pads. The semiconductor layer sequence includes an active zone for radiation generation, a waveguide layer, and a cladding layer. The semiconductor layer sequence further includes a current diaphragm layer which is electrically conductive along a resonator axis (R) in a central region and electrically insulating in adjoining edge regions. Transverse to the resonator axis (R), the central region includes a width of at least 10 ?m and the edge regions includes at least a minimum width. The minimum width is 3 ?m or more. Seen in plan view, the semiconductor layer sequence as well as at least one of the contact pads on the semiconductor layer sequence are continuous components extending in the central region as well as on both sides at least up to the minimum width in the direction transverse to the resonator axis (R) adjoining the central region and beyond the central region.

A three-color light source 1 is a three-color light source that combines red, green, and blue laser light so as to output light. The three-color light source 1 includes a red LD 11, a green LD 12, a blue LD 13, a first collimator lens 61, a second collimator lens 62, a third collimator lens 63, a first wavelength filter 81, a second wavelength filter 82, a carrier 30 that is equipped with the LDs 11 to 13, the collimator lenses 61 to 63, and the wavelength filters 81 and 82, and a TEC 40 that is equipped with the carrier 30. The red LD 11 is formed of a GaAs-based material, and the green LD 12 and the blue LD 13 are formed of GaN-based materials.