A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.

A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.

A method of manufacturing a light emitting device includes: providing a light source including one or more semiconductor laser elements, an optical member including one or more lens parts, a condensing lens, and a photodetector, one above the other; causing at least one semiconductor laser element to emit light; determining a reference detection position of light; placing a first light-shielding member to shield a portion of the light passed through the lens parts; determining a post-shielding detection position; adjusting a distance between the light source and the optical member based on the reference detection position and the post-shielding detection position; and securing the optical member and the light source to each other.

In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.

A light emitting module is disclosed. The light emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens, a second optical path conversion member for providing the first reflected light as second reflected light to pass through the condensing lens, and a case for receiving at least the condensing lens, the light source, the first optical path conversion member, and the second optical path conversion member.

A light-emitting module is disclosed. The light-emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens, a second optical path conversion member for reflecting the first reflected light to provide second reflected light to pass through the condensing lens and a wavelength conversion unit for receiving the second reflected light, converting a wavelength of the received second reflected light, and radiating light the wavelength of which has been converted.

A light emitting module is disclosed. The light emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens and a second optical path conversion member for providing the first reflected light as second reflected light to pass through the condensing lens.

A method of manufacturing a semiconductor optical device is a method of manufacturing a semiconductor optical device including a chip containing a III-V compound semiconductor and a first substrate. The chip includes a second substrate and a semiconductor layer stacked on the second substrate. The method includes forming the chip by cutting the second substrate and the semiconductor layer, bonding the semiconductor layer of the chip to the first substrate, removing the second substrate by etching the chip bonded to the first substrate. A shape of the chip in plan view does not have a side perpendicular to a first direction. In the removing the second substrate, etching proceeds more easily in a second direction crossing the first direction than in the first direction.

This disclosure describes a multi-junction laser diode with improved wavelength stability. The multi-junction laser diode is found in an edge emitting laser (EEL). The disclosed system and method are suited for improving the wavelength stability of multi-junction EEL without coupling the laser modes of the individual junctions and without using any external elements such as Fiber Bragg Gratings (FBR), Volume Bragg Gratings (VBG) or Thermoelectric Cooling (TEC).