A light-emitting module is disclosed. The light-emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens, a second optical path conversion member for reflecting the first reflected light to provide second reflected light to pass through the condensing lens and a wavelength conversion unit for receiving the second reflected light, converting a wavelength of the received second reflected light, and radiating light the wavelength of which has been converted.

A three-color light source 1 is a three-color light source that combines red, green, and blue laser light so as to output light. The three-color light source 1 includes a red LD 11, a green LD 12, a blue LD 13, a first collimator lens 61, a second collimator lens 62, a third collimator lens 63, a first wavelength filter 81, a second wavelength filter 82, a carrier 30 that is equipped with the LDs 11 to 13, the collimator lenses 61 to 63, and the wavelength filters 81 and 82, and a TEC 40 that is equipped with the carrier 30. The red LD 11 is formed of a GaAs-based material, and the green LD 12 and the blue LD 13 are formed of GaN-based materials.

A light-emitting module is disclosed. The light-emitting module includes a condensing lens for condensing incident light into a space, a light source for providing first light to pass through the condensing lens, a first optical path conversion member for reflecting the first light to provide first reflected light to pass through the condensing lens, a second optical path conversion member for reflecting the first reflected light to provide second reflected light to pass through the condensing lens and a wavelength conversion unit for receiving the second reflected light, converting a wavelength of the received second reflected light, and radiating light the wavelength of which has been converted.

A three-color light source 1 is a three-color light source that combines red, green, and blue laser light so as to output light. The three-color light source 1 includes a red LD 11, a green LD 12, a blue LD 13, a first collimator lens 61, a second collimator lens 62, a third collimator lens 63, a first wavelength filter 81, a second wavelength filter 82, a carrier 30 that is equipped with the LDs 11 to 13, the collimator lenses 61 to 63, and the wavelength filters 81 and 82, and a TEC 40 that is equipped with the carrier 30. The red LD 11 is formed of a GaAs-based material, and the green LD 12 and the blue LD 13 are formed of GaN-based materials.

An optical semiconductor device has a semiconductor laser which emits front-end-surface-side emergent light on the front end surface side and emits rear-end-surface-side emergent light on the rear end surface side, and a mount substrate having the semiconductor laser provided on its front surface. The rear-end-surface-side emergent light is emitted while having an emergence optical axis that extends away from the mount substrate with increase in distance from the rear end surface.

An optical semiconductor device has a semiconductor laser which emits front-end-surface-side emergent light on the front end surface side and emits rear-end-surface-side emergent light on the rear end surface side, and a mount substrate having the semiconductor laser provided on its front surface. The rear-end-surface-side emergent light is emitted while having an emergence optical axis that extends away from the mount substrate with increase in distance from the rear end surface.

A three-color light source 1 is a three-color light source that combines red, green, and blue laser light so as to output light. The three-color light source 1 includes a red LD 11, a green LD 12, a blue LD 13, a first collimator lens 61, a second collimator lens 62, a third collimator lens 63, a first wavelength filter 81, a second wavelength filter 82, a carrier 30 that is equipped with the LDs 11 to 13, the collimator lenses 61 to 63, and the wavelength filters 81 and 82, and a TEC 40 that is equipped with the carrier 30. The red LD 11 is formed of a GaAs-based material, and the green LD 12 and the blue LD 13 are formed of GaN-based materials.

An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

In an illustrative embodiment, a VCSEL comprises a substrate, a first DBR on a first major surface of the substrate, an active region on the first DBR, a second DBR on the active region, and electrically conductive vias that pass through the substrate and provide ohmic contact with the DBRs so that electrical connections to both DBRs are available on the substrate side of the VCSEL. The VCSEL is formed by forming a first DBR on a first major surface of a substrate, forming an active region on the first DBR, forming a second DBR on the active region, thinning the substrate, making a first via hole through the substrate to the first DBR, making a second via hole through the substrate and the first DBR, filling the first via hole with an electrically conducting material to contact the first DBR, filling the second via hole with an electrically conducting material, and coupling the second via hole to the second DBR.

A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.