A light emitting device includes: at least one semiconductor laser element; and a light-transmissive member including: an upper surface, a lower surface, and a light-transmissive region through which laser light emitted from the at least one semiconductor laser element is transmitted from the lower surface to the upper surface, wherein: at least the light-transmissive region is made of sapphire, the light-transmissive member includes an incident surface on which the laser light is incident, the incident surface being an a-plane of the sapphire, and the light-transmissive member is oriented such that a polarization direction of the laser light incident on the incident surface is parallel or perpendicular to a c-axis of the sapphire in a top view.

GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

A power over fiber system includes a power sourcing equipment, a powered device, an optical fiber cable and a converter. The power sourcing equipment includes a semiconductor laser that oscillates with electric power, thereby outputting feed light. The powered device includes a photoelectric conversion element that converts the feed light into electric power. The optical fiber cable has one end connectable to the power sourcing equipment and another end connectable to the powered device to transmit the feed light. The converter converts a wavelength of the feed light.

Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000 K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.

A light emitting device includes: a plurality of light emitting elements including a first light emitting element and a second light emitting element; a case enclosing the light emitting elements and comprising a light-transmissive region; a plurality of main lenses, each covering a portion of the light-transmissive region, the plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first light emitting element and a second main lens configured to collimate or converge light emitted from the second light emitting element; and a plurality of sub-lenses disposed in the case, the plurality of sub-lenses including a first sub-lens located in an optical path between the first light emitting element and the first main lens, and a second sub-lens located in an optical path between the second light emitting element and the second main lens.

Provided is a semiconductor laser device enabling efficient emission of a laser beam without damaging a light emitting surface of a light emitting element. Semiconductor laser device includes light emitting element, optical element, first heat radiation part, and second heat radiation part. Laser beam emitted from light emitting element enters optical element. First heat radiation part is connected to light emitting element. Second heat radiation part is connected to light emitting element. First heat radiation part includes first recess. Second heat radiation part includes second recess. One end of optical element is fitted into first recess, and the other end of optical element is fitted into second recess.

A low numerical aperture fiber output diode laser module, which having several independent diode lasers, and collimated and converged the light beam, for the coupling the light to the core optical fiber with a core diameter of 105 um and a numerical aperture of 0.12. Compared with general products with a numerical aperture of 0.22, the light output angle is reduced to 55%, and use a general blue laser diode for verification. Use an optical software for facilitating the design and optimization of the parameters of the optical lens module.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

In at least one embodiment, the radiation-emitting device comprises a laser bar for emitting laser radiation. The device further includes a waveguide having a core, a cladding, an entry face, and an exit face. The device may include a heat sink having a mounting side where the waveguide is applied thereon, the cladding being arranged at least above and below the core in relation to the mounting side. The device may be configured so that, during operation, the laser radiation impinges on the entry face of the waveguide and passes from there into the core. The core may include a conversion element configured to convert the laser radiation into secondary radiation. The waveguide may be configured to guide the laser radiation and/or the secondary radiation inside the core as far as the exit face by reflection at the interface between the cladding and the core.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.