A light-emitting device includes a laminate provided at a substrate, a first electrode provided on an opposite side of the laminate from the substrate, and a second electrode provided on an opposite side of the first electrode from the substrate. The laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer. The first electrode constitutes a plurality of column portions. The second electrode is coupled to the plurality of column portions. The first electrode is a transparent electrode formed of a metal oxide transmitting light generated at the light-emitting layer.

A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device.

A light emission module includes a first light emission unit that includes a first light emission device and emits first light. The first light emission device includes a plurality of first light emission portions, each including a light emission surface, where light from a plurality of first light emission elements is emitted, a heat dissipation surface provided opposite to the light emission surface, and a connection portion being positioned between the light emission surface and the heat dissipation surface and including a wiring mounting surface where the light emission elements are electrically connected. The light emission module further includes a first optical member that reflects the first light, a housing including a base member where the first light emission unit and the first optical member are disposed and a lid member surrounding the light emission device surrounding the first light emission unit and the first optical member that are disposed on the base member, and a heat sink being connected to the heat dissipation surface and including a mounting surface where the first light emission device is mounted. The wiring mounting surface extends upward upper than a first upper surface of the housing, and a portion of the wiring mounting surface is exposed to the outside of the housing.

An optical apparatus includes: an optical component opposed to and spaced apart from a light-emitting surface through which laser light is emitted; a case that houses a semiconductor laser element and the optical component and includes an introduction port for introducing gas and an exhaust port for exhausting the gas; and a flow passage section (i.e., a tubular body) including a spray port for spraying the semiconductor laser element with the gas introduced from the introduction port.

A method of manufacturing a semiconductor laser element includes: first dividing a substrate to produce a divided substrate including waveguides spaced apart in a second direction, the substrate being a substrate on which a nitride-based semiconductor laser stacking structure including waveguides extending in the first direction is formed; cleaving the divided substrate in the second direction to produce a semiconductor laser element including waveguides; and second dividing the semiconductor laser element in the first direction to remove an end portion of the semiconductor laser element in the second direction. The cleaving includes: forming, on the divided substrate, a cleavage lead-in groove extending in the second direction; and cleaving the divided substrate using the cleavage lead-in groove. In the second dividing, a portion including the cleavage lead-in groove is removed as the end portion of the semiconductor laser element in the second direction.

A light source device includes: light-emitting portions arranged at least along an arrangement direction; one or more optical members including a first reflective surface and a second reflective surface, and configured to reflect light emitted from the plurality of light-emitting portions and emit the light in a predetermined direction; and a condenser lens configured to condense the light emitted from the one or more optical members. The first reflective surface is configured to reflect the light emitted from the plurality of light-emitting portions toward the second reflective surface. The second reflective surface is configured to reflect the light reflected by the first reflective surface. Each of the first reflective surface and the second reflective surface is a surface having a curvature in the arrangement direction. The curvature of the second reflective surface in the arrangement direction is greater than the curvature of the first reflective surface in the arrangement direction.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.

[Object] To provide a laser element capable of preventing laser characteristics from deteriorating while suppressing electron overflow and improving the yield at the time of production.

[Solving Means] A laser element according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and an electron barrier layer. The first semiconductor layer is formed of a group iii nitride semiconductor having a first conducive type. The second semiconductor layer is formed of a group iii nitride semiconductor having a second conductive type. The active layer is formed of a group iii nitride semiconductor and is provided between the first semiconductor layer and the second semiconductor layer. The electron barrier layer is provided between the active layer and the second semiconductor layer and is formed of a group iii nitride semiconductor having a composition ratio of Al larger than that of the second semiconductor layer, a recessed and projecting shape being formed on a surface of the electron barrier layer on a side of the second semiconductor layer, the recessed and projecting shape having a height difference between a projecting portion and a recessed portion in a direction perpendicular to a layer surface direction being 2 nm or more and less than 10 nm.

A nitride-based electronic device includes an oxide cladding layer, a nitride cladding layer, and a nitride active region layer arranged between the oxide cladding layer and the nitride cladding layer. First and second metal contacts are electrically coupled to the nitride active region layer. The nitride-based electronic device can be formed in a system in which a non-reactive chamber is arranged between an oxide reaction chamber and a nitride reaction chamber so that oxide and nitride layers can be grown without exposing the device to the environment between growth of the oxide and nitride layers.