A method of manufacturing a wavelength conversion member includes: preparing a composite by layering a layered body and a ceramic sheet that includes a phosphor, the layered body including a pair of light-reflective green sheets each containing a reflective material, and a light-shielding green sheet containing a light shielding material with the light-shielding green sheet being layered between the pair of reflective green sheets; and pressurizing and firing the composite.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.

A light emitting device includes a base member, a laser element, a retaining member, a fluorescent member, and first and second fixing members. The retaining member has a first surface on a laser element side and a second surface not on the laser element side. The fluorescent member is fixed to a through hole of the retaining member. The first and second fixing members clamp the retaining member. The first and second fixing members have first and second contact surfaces in contact with the first and second surfaces of the retaining member, respectively. A distance between the first and second contact surfaces becomes smaller as the first and second contact surfaces become farther from the through hole. The retaining member, the first and second fixing members are arranged such that a space surrounded by the retaining member, and the first and second fixing members exists around the retaining member.

The invention relates to a light module including a laser source capable of emitting a coherent light beam of given wavelength, a first sensor capable of picking up a first light signal of a wavelength lying in a first band of wavelengths centered around the given wavelength and a second sensor capable of picking up a second light signal of a wavelength lying in a second band of wavelengths centered around a wavelength distinct from the given wavelength. In particular, the light module includes a detection module capable of comparing at least one value that is a function of the signals to a threshold value and of commanding the stopping of the laser source as a function of the comparison.

A light emission device includes: a plurality of semiconductor light-emitting elements; an optical element configured to collimate light emitted from each of the plurality of semiconductor light-emitting elements and output a plurality of collimated beams; a converging portion having a surface of a hyperboloid or a paraboloid configured to converge the plurality of collimated beams; and a wavelength-converting portion including a transmissive region, and a reflective region that surrounds the transmissive region, the transmissive region including a light-incident surface at which the plurality of collimated beams that have been converged by the converging portion enter, wherein the transmissive region includes a phosphor adapted to be excited by the plurality of collimated beams that have been converged by the converging portion.

A light source includes a laser diode device and a wavelength conversion member. The wavelength conversion member includes a wavelength conversion element having voids and a dielectric element. The dielectric element fills the voids on a surface of the wavelength conversion element adjacent to the dielectric element. An output facet of the laser diode device is configured to output a laser beam of electromagnetic radiation. The laser beam is incident on a surface of the wavelength conversion member and a light is emitted from the wavelength conversion member. The light emission includes a mixture of wavelengths characterized by at least the second wavelength from the wavelength conversion member.

A lighting device provides a pump light unit for emitting pump light, a phosphor element for generating conversion light in response to excitation by the pump light, and a wavelength-dependent beam splitter which is reflective to the pump light and transmissive to the conversion light. The first pump light portion is incident on a light incidence surface of the beam splitter and is reflected from the beam splitter to the phosphor element. The element emits the conversion light in response to the excitation by the pump light. The conversion light is likewise incident on the light incidence surface, but transmitted by the beam splitter and exiting at a light exit surface of the beam splitter opposite the light incidence surface. Concurrently, the second pump light portion, reflected from the beam splitter, is directed onto the light exit surface of the beam splitter and is superposed with the conversion light.

A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.

[Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element.

[Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.