A semiconductor optical amplifier includes: a substrate; a light source unit formed on the substrate; and an optical amplification part that amplifies light propagating in a predetermined direction from the light source unit and emits the amplified light in an emission direction intersecting with the substrate surface. The optical amplification part includes a conductive region extending in the predetermined direction along the substrate surface from the light source unit, and a nonconductive region formed around the conductive region. The conductive region includes a first region extending from the light source unit and having a predetermined width as seen from a direction perpendicular to the substrate surface, and a second region connected to the first region and having a width widened relative to the predetermined width of the first region, the second region being configured to expand the propagation light in a direction intersecting with the predetermined direction.

A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

An optical device includes: a substrate having a first surface, and a second surface opposite of the first surface; a plurality of surface emitting laser elements provided on the first surface of the substrate and configured to emit light in a direction intersecting the first surface; a plurality of optical elements disposed on the second surface so as to respectively correspond to the plurality of surface emitting laser elements; and an anti-reflection structure between the substrate and the plurality of optical elements.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

An example device may include a light source, an optical element, and, optionally, an encapsulant layer. A light beam generated by the light source may be received by the optical element and redirected towards an illumination target, such as an eye of a user. The optical element may include a material, for example, with a refractive index of at least approximately 2 at a wavelength of the light beam. The light source may be a semiconductor light source, such as a light-emitting diode or a laser. The optical element may be supported by an emissive surface of the light source. Refraction at an exit surface of the optical element, and/or within a metamaterial layer, may advantageously modify the beam properties, for example, in relation to illuminating a target. In some examples, the light source and optical element may be integrated into a monolithic light source module.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidized vertical cavity surface emitting laser for emitting laser light having a peak wavelength of 860 nm, and a manufacturing method thereof. The vertical cavity surface emitting laser according to the present invention includes a current diffusion layer having a high doping region at least in a portion between an upper electrode and a lower distributed Bragg reflector.

A semiconductor laser includes an active layer which is provided between the p-type semiconductor region and the n-type semiconductor region and has a type II quantum well structure. The type II quantum well structure includes a well layer made of a III-V compound semiconductor and a plurality of barrier layers. The well layer includes a first region and a second region, the first region having a low potential for electrons in the well layer and a high potential for holes in the well layer, the second region having a high potential for electrons in the well layer and a low potential for holes in the well layer. The first region and the second region of the well layer are arranged in a direction from one of the barrier layers to another of the barrier layers.

A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.

To increase the maximum operating temperature of quantum cascade lasers of a terahertz region, a quantum cascade laser element 1000 according to the present invention has a semiconductor superlattice structure sandwiched between a pair of electrodes, the semiconductor superlattice structure has an active region 100 that emits electromagnetic waves of a frequency in a THz region under an external voltage applied through the pair of electrodes for operation, and the active region 100 has plural unit structures 10U, each of which is repeatedly layered over one another. Each of the unit structures 10U has a double quantum well structure formed of a first well layer 10W1 and a second well layer 10W2 separated from each other by a barrier layer, the first well layer 10W1 and the second well layer 10W2 have compositions different from each other, and when the external voltage is not being applied, potential energy for electrons in the second well layer 10W2 is lower than that in the first well layer 10W1.

A semiconductor light-emitting device, includes: a semiconductor light-emitting element; a support including a base and a conductive part and configured to support the semiconductor light-emitting element; and a cover configured to overlap the semiconductor light-emitting element as viewed in a first direction, and to transmit light from the semiconductor light-emitting element, wherein the cover includes a base layer having a front surface and a rear surface which transmit the light from the semiconductor light-emitting element and face opposite sides to each other in the first direction, wherein the rear surface faces the semiconductor light-emitting element, wherein the base layer includes a plurality of undulation parts bonded to the support by a bonding material, and wherein the undulation parts are more uneven than the rear surface.