A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

A vibration device includes a substrate having a first surface and a second surface at an opposite side to the first surface, a vibration element disposed on the first surface, a first through electrode which penetrates the substrate, and is configured to electrically couple the power supply interconnection disposed on the second surface and the first circuit block disposed on the first surface, and a second through electrode which penetrates the substrate, and is configured to electrically couple the power supply interconnection and the second circuit block including an analog circuit disposed on the first circuit, wherein R1>R4 and R2>R4, in which R1 is an electric resistance of the first through electrode, R2 is an electric resistance of the second through electrode, and R4 is an electric resistance of a zone of the power supply interconnection coupling the first through electrode and the second through electrode.

A radio-frequency module is provided that includes a structure, a filtering element disposed on the structure, a switching element embedded in the structure, and an impedance element connected to the switching element and the filtering element. In a plan view of the structure, the switching element and the filtering element overlap each other in at least part thereof. The structure has a plurality of vias including a via , a via and a via. The via connects the input-output terminal and the filtering element. The via connects the ground terminal and an impedance adjustment circuit including the switching element and the impedance element. In a plan view, the via is located in a smallest rectangular region encompassing the vias.

A vibrator device includes a semiconductor substrate, a base, a vibrating element, and a lid. The semiconductor substrate has a first surface and a second surface which is in a front-back relationship with the first surface. The base includes an integrated circuit disposed on a first surface or a second surface. The vibrating element is electrically coupled to the integrated circuit and is disposed on the first surface side. The lid is joined to the base at a joining portion of the base to accommodate the vibrating element. The integrated circuit includes a passive element, and the passive element is disposed such that at least a part of the passive element overlaps with the joining portion in a plan view from a direction orthogonal to the first surface.

A vibration device includes a base including a semiconductor substrate and through electrodes that pass through the portion between first and second surfaces of the semiconductor substrate, and a vibrator fixed to the first surface via an electrically conductive joining member. The following components are placed at the second surface: an oscillation circuit that is electrically coupled to the vibrator via the through electrodes and generates an oscillation signal by causing the vibrator to oscillate, a temperature sensor circuit, a temperature compensation circuit that performs temperature compensation on the oscillation signal, and an output buffer circuit that outputs a clock signal based on the oscillation signal. Dsx1<Dbx1, a distance between the output buffer circuit and one of the through electrodes is Dbx1, a distance between the temperature sensor circuit and the other through electrode is Dsx1.

A high-frequency device includes: a circuit substrate including dielectric layers that are stacked, wiring patterns located on at least one of the dielectric layers, and a passive element formed of at least one of the wiring patterns, the circuit substrate having a first surface that is a surface of an outermost dielectric layer in a stacking direction of the dielectric layers; a terminal for connecting the high-frequency device to an external circuit, the terminal being located on the first surface and electrically connected to the passive element through a first path in the circuit substrate; and an acoustic wave element located on the first surface and electrically connected to the passive element through a second path in the circuit substrate.

An electronic component module includes an electronic component, a resin structure, a wiring portion, and a shield portion. The resin structure covers a second main surface and at least a portion of a side surface of the electronic component. The wiring portion is electrically connected to the electronic component. The shield portion includes a first conductor layer and a second conductor layer. The first conductor layer is spaced away from the electronic component between the electronic component and the resin structure, and has electrical conductivity. The second conductor layer is spaced away from the wiring portion between the wiring portion and the resin structure, and has electrical conductivity. In the shield portion, the first conductor layer and the second conductor layer are integrated.

Embodiments of the invention include a piezoelectric package integrated filtering device that includes a film stack. In one example, the film stack includes a first electrode, a piezoelectric material in contact with the first electrode, and a second electrode in contact with the piezoelectric material. The film stack is suspended with respect to a cavity of an organic substrate having organic material and the film stack generates an acoustic wave to be propagated across the film stack in response to an application of an electrical signal between the first and second electrodes.

A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure.

A vibration device has a substrate including a first surface and a second surface located on an opposite side to the first surface, a heater provided on the first surface side of the substrate, a temperature sensor provided on the first surface side of the substrate, a vibration element disposed on the first surface side of the substrate, a lid including a third surface joined on the first surface side and a fourth surface located on an opposite side to the third surface, and a circuit provided on one of the first surface, the second surface and the fourth surface, and including a temperature control circuit configured to control the heater based on an output of the temperature sensor.