Provided is a multiplexer that includes a first filter (first transmission filter), a second filter (second reception filter), a third filter (third reception filter), a first inductor, and a second inductor. The first inductor is connected in series with one parallel arm resonator (second parallel arm resonator) of the first filter between the one parallel arm resonator and ground. The second inductor is connected in series with another parallel arm resonator (third parallel arm resonator) of the first filter between the other parallel arm resonator and ground. The first inductor and the second inductor have the same winding direction as each other from the first filter side toward the ground side thereof.

A semiconductor package includes a main substrate, a resonator device disposed above the main substrate, a wiring portion connected to the resonator device, an electrical connection structure connected to the wiring portion and the main substrate, an encapsulant encapsulating the resonator device and the electrical connection structure, and a heat dissipation member bonded to and mounted on the resonator device. A cavity is provided in the resonator device, and is formed between the resonance portion and a resonator device substrate provided in the resonator device.

A single-chamber-type temperature-sensor-provided crystal unit includes: a single chamber; and a quartz-crystal vibrating piece and a temperature sensor, provided in the single chamber. The quartz-crystal vibrating piece has a square planar shape. The quartz-crystal vibrating piece is secured in the single chamber at two securing portions via conductive members. The two securing portions are in proximities of both ends of a first side of the quartz-crystal vibrating piece. The temperature sensor has a rectangular parallelepiped shape. The temperature sensor is disposed such that a longitudinal surface of the temperature sensor is parallel to a line segment Y and the temperature sensor is close to a side of the two securing portions within the single chamber, when a line segment connecting the two securing portions is defined as the line segment Y.

A vibrator device has the vibrator element, a support substrate supporting the vibrator element, and a plurality of interconnections disposed on the support substrate. The support substrate includes an element mounting base, a supporting base, a frame located between the element mounting base and the supporting base, inner beams for coupling the element mounting base and the frame to each other, and outer beams for coupling the frame and the supporting base to each other. The plurality of interconnections include a drive signal interconnection and a detection signal interconnection laid around to the element mounting base and the supporting base, and the drive signal interconnection and the detection signal interconnection are laid around to the element mounting base and the frame through the respective inner beams different from each other, and are laid around to the frame and the supporting base through the respective outer beams different from each other.

A resonator device includes a base substrate including a principal surface, a side surface, and an inclined surface that couples the principal surface to the side surface and that is inclined with respect to the principal surface and the side surface, a resonator element arranged on the principal surface of the base substrate, and a lid that is bonded to the principal surface of the base substrate and accommodates the resonator element between the lid and the base substrate. A bonding area in which the base substrate and the lid are bonded is positioned inside an outer edge of the principal surface.

A hybrid filter device (1) includes an acoustic wave device (AD) that includes an acoustic wave resonator and a passive device (PD) that includes an inductor element or an inductor element and a capacitance element. At least one of the acoustic wave device (AD) and the passive device (PD) is mounted on a substrate (20) of the hybrid filter device (1) and the acoustic wave device (AD) and the passive device (PD) are electrically connected to each other. The acoustic wave device (AD) overlaps the passive device (PD) when the hybrid filter device (1) is viewed in a direction perpendicular to one main surface (20a) of the substrate (20).

A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure.

A vibration device includes a semiconductor substrate having a first surface and a second surface, an integrated circuit disposed on the first surface, a first terminal which is disposed on the second surface and to which a substrate potential is applied, a second terminal which is disposed on the second surface and to which a potential different from the substrate potential is applied, a first through electrode which is configured to electrically couple the first terminal and the integrated circuit to each other, a second through electrode which is configured to electrically couple the second terminal and the integrated circuit to each other, a frame which has an insulating property, a vibration element disposed on the first surface, and a lid bonded to the first surface, wherein the first through electrode is located outside the frame, and the second through electrode is located inside the frame.

A method for manufacturing a semiconductor module is provided. The method includes: providing a substrate, wherein the substrate comprises a front side and at least one semiconductor element formed on the front side; forming a shielding structure on the at least one semiconductor element; forming a piezoelectric layer on the shielding structure.

An acoustic wave device includes an acoustic wave generator, a support portion, a protective member, and at least one element embedded in the protective member. The acoustic wave generator is disposed on a surface of a substrate. The support portion is disposed on the substrate along a circumference of the acoustic wave generator. The protective member is coupled to the support portion and disposed to be spaced apart from the acoustic wave generator by an interval.