A vibrator device includes a first excitation electrode, a first pad electrode, and a first drawn wiring line that are disposed at a first surface of a vibrator element, a second excitation electrode, a second pad electrode, and a second drawn wiring line that are disposed at a second surface of the vibrator element, and a spiral first electrode pattern disposed at the first surface of the vibrator element. The first excitation electrode and the second excitation electrode are disposed so as to face each other with the vibrator element therebetween. A first central end section of the first electrode pattern is electrically coupled to the second drawn wiring line via a through electrode provided in the vibrator element. A first outer circumferential end section of the first electrode pattern is electrically coupled to the first drawn wiring line. The first drawn wiring line is electrically coupled to at least one of the first excitation electrode and the first pad electrode. The second drawn wiring line is electrically coupled to at least one of the second excitation electrode and the second pad electrode.

A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.

The present disclosure provides an integration method and integration structure for a control circuit and an acoustic wave filter. The method includes: providing a base, the base being provided with a control circuit; forming a first cavity and a second cavity on the base; providing a Surface Acoustic Wave (SAW) resonating plate and a Bulk Acoustic Wave (BAW) resonating structure, a first input electrode and a first output electrode being arranged on a surface of the SAW resonating plate, a second input electrode and a second output electrode being arranged on a surface of the BAW resonating structure, and the BAW resonating structure including a third cavity; facing the surface of the SAW resonating plate towards the base, such that the SAW resonating plate is bonded to the base and seals the first cavity, and facing the surface of the BAW resonating structure towards the base, such that the BAW resonating structure is bonded to the base and seals the second cavity; and electrically connecting the control circuit to the first input electrode, the first output electrode, the second input electrode and the second output electrode. The present disclosure may control the acoustic filters through the control circuit provided on the base, and may avoid the problems of the complex electrical connection process, large insertion loss and the like due to a fact that the existing acoustic filters are integrated to the Printed Circuit Board (PCB) as discrete devices.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. A lower cavity (120) is formed in a device wafer (100) containing the control circuit (110), and the device wafer (100) is then processed so that the lower cavity (120) is exposed from a back side (100D) of the device wafer (100). A substrate (600) in which an upper cavity (610) is formed at a corresponding location is bonded to the back side (100D) of the device wafer (100) in such a manner that the piezoelectric vibrator (500) is sandwiched between the device wafer (100) and the substrate (600), with the upper cavity (610) and the lower cavity (120) being aligned with each other on opposing side of the piezoelectric vibrator (500), thus resulting in the formation of the crystal resonator and simultaneously achieving the integration of the crystal resonator with the control circuit (110). This crystal resonator is more compact in size, less power-consuming and able to integrate with other semiconductor components with an increased degree of integration.

A method for integrating a crystal resonator with a control circuit and an integrated structure thereof. Integration of the crystal resonator with the control circuit (110) is accomplished by forming a lower cavity (120) in a device wafer (100) containing the control circuit (110) and an upper cavity (310) in a substrate (300), and by bonding the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator is sandwiched between the device wafer (100) and the substrate (300). A semiconductor die (700) can be further bonded to a back side of the same device wafer (100). This results in an increased degree of integration of the crystal resonator and allows on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. The integration of the crystal resonator with the control circuit is accomplished by bonding a substrate (300) containing an upper cavity (310) to a device wafer containing both the control circuit and a lower cavity (120) so that a piezoelectric vibrator is sandwiched between the device wafer (100) and the substrate (300). In addition, a semiconductor die (700) may be bonded to a back side of the device wafer (100).

Hybrid filters and more particularly filters having acoustic wave resonators (AWRs) and lumped component (LC) resonators and packages therefor are described. In an example, a packaged filter includes a package substrate, the package substrate having a first side and a second side, the second side opposite the first side. A first acoustic wave resonator (AWR) device is coupled to the package substrate, the first AWR device comprising a resonator. A plurality of inductors is in the package substrate.

A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.

A circuit board has a glass core in which a through hole is formed, and a conductor pattern is formed on an inner peripheral wall of the through hole and a surface of the glass core to form a circuit element including a solenoid coil element and a capacitor element. Accordingly, a low-cost and compact circuit board capable of supporting high-capacity communication for thin mobile communication devices such as smartphones can be provided. Since the circuit board can be electrically connected to at least one of the electronic components such as a switch, an amplifier, and a filter via one terminal, and can be electrically connected to a mother board via another terminal, it has integrated functions, and can be suitably used for thin mobile communication devices such as smartphones.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. The crystal resonator is integrated with both the control circuit (110) and a semiconductor die (900) on a single device wafer (100) through forming a piezoelectric vibrator (500) on, and bonding the semiconductor die (900) to, a back side of the device wafer (100). This allows an increased degree of integration of the crystal resonator and on-chip modulation of its parameters. Compared with traditional crystal resonators, the disclosed crystal resonator is more compact in size and hence less power-consuming.